| PART |
Description |
Maker |
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| CY7C09089 CY7C09079A CY7C09099 CY7C91089 CY7C91099 |
64K x 8 Synchronous Dual-Port Static RAM(64K x 8 同步双端口静态RAM)
From old datasheet system
32K/64K/128K x 8/9Synchronous Dual-Port Static RAM
|
Cypress Semiconductor Corp.
|
| CY7C1021B-15VXC CY7C1021B-15VXE CY7C1021B-15VXI CY |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61LV6416 |
64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS静态RAM) 64K的16高速CMOS静态RAM.3伏，64K的16高速的CMOS静态RAM）的
|
Integrated Silicon Solution, Inc.
|
| CY7C187-15PXC CY7C187-25VXC CY7C187-35VXC |
64K x 1 Static RAM 64K X 1 STANDARD SRAM, 35 ns, PDSO24
|
Cypress Semiconductor, Corp.
|
| MCM67A618 MCM67A618FN10 MCM67A618FN12 MCM67A618FN1 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K X 18 CACHE TAG SRAM, 10 ns, PQCC52
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| IS61LP6B436A-166TQLBI IS61LP6436A IS61LP6436A-133T |
64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| CY7C195-12LC CY7C195-15LC CY7C195-15LMB CY7C194-12 |
64K x 4 Static RAM 64K X 4 STANDARD SRAM, 25 ns, PDSO28
64K x 4 Static RAM 64K X 4 STANDARD SRAM, 25 ns, PDIP28
64K x 4 Static RAM 64K X 4 STANDARD SRAM, 15 ns, PDIP28
x4 SRAM
|
Cypress Semiconductor, Corp.
|
| IDT70V3389S6PRFI IDT70V3389S IDT70V3389S4BC IDT70V |
From old datasheet system
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA256
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PQFP128
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT70V658S15BC IDT70V658S15BCI IDT70V658S15BF IDT7 |
From old datasheet system
Dual N-Channel Digital FET
30V N-Channel PowerTrench MOSFET
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
