| PART |
Description |
Maker |
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| M470L3224BT0 M470L3224BTO |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
256MB DDR SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD18M645AL6-H HYMD18M645AL6-K HYMD18M645A6-H HYM |
SDRAM|DDR|8MX64|CMOS|DIMM|200PIN|PLASTIC
8M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| HYS64D64020GBDL-6-C HYS64D64020HBDL-6-C |
DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based; Available 3Q04
|
Infineon
|
| HYS64D64020GDL-6-A HYS64D64020GDL-7-A HYS64D64020G |
512MB (64Mx64) PC2100 2-bank 12MB的（64Mx64）PC2100 2银行
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
|
Infineon Technologies AG
Unisonic Technologies Co., Ltd.
|
| HYS64D64020HDL-5-B HYS64D64020HDL-6-B |
DDR SDRAM Modules - 512 MB (64Mx64) PC3200 2-bank
DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank
|
Infineon
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| M464S6453CKS |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| W3EG6465S265D4C W3EG6465S263D4C W3EG6465S262D4C W3 |
512MB- 64Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYMD564M646BL6-D43 HYMD564M646BL6-H HYMD564M646BL6 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP)
|
Hynix Semiconductor
|
