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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
...ion 32Mx64 32Mx64 32Mx64 32Mx64 64mx64 64mx64 64mx64 64mx64 128Mx64 128Mx64 128Mx64 128Mx64 Component Composition 32Mx16(K4T51163QB)*4 32Mx16(K4T51163QB)*4 32Mx16(K4T51163QB)*4 32Mx16(K4T51163QB)*4 32Mx16(K4T51163QB)*8 32Mx16(K4T51163QB)*8 ... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
M470T3354EZ3-LD5
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| OCR Text |
.............. 7 7.2 512mb, 64mx64 module(m470t6554ez3) ................ ................. ................ .............. .............. ............ 8 7.3 1gb, 128mx64 module(m470t2953ez3) .............. ................ ....... |
| Description |
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
343.91K /
20 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
M470T6464AZ3-LD5 M470T2864AZ3-LD5
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| OCR Text |
.............. 7 7.2 512mb, 64mx64 module - m470t6464az3 ............... ................. ................ .............. .............. ............ 8 7.3 2gb, 256mx64 module - m470t5669az0 ................. .................... |
| Description |
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
421.83K /
23 Page |
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it Online |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT512D64SH8B0GN-75B
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| OCR Text |
...fm is organized as two ranks of 64mx64 high-speed memory array and uses sixteen 64mx8 ddr sdrams bga packages. the nt512d64sh8b0gm is organized as two ranks of 32mx64 high-speed memory array and uses eight 32mx16 ddr sdrams tsop packages.... |
| Description |
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
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| File Size |
508.34K /
18 Page |
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it Online |
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Hynix Semiconductor, Inc.
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| Part No. |
HMT125S6AFP6C-S5 HMT125S6AFP6C-S6
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| OCR Text |
...tional block diagram 3.1 512mb, 64mx64 module(1rank of x16) 3.2 1gb, 128mx64 module(2rank of x16) 3.3 2gb, 256mx64 module(2rank of x8) 4. absolute maximum ratings 4.1 absolute maximum dc ratings 4.2 operating temperature range 5. ac & dc ... |
| Description |
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, SODIMM-204
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| File Size |
617.86K /
51 Page |
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it Online |
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