| PART |
Description |
Maker |
| STA421A06 STA421A |
Transistor Array For Source Drive
PNP General purpose
|
Sanken electric
|
| M54562WP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54562FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
|
Mitsubishi Electric Semiconductor
|
| M54563FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
|
Mitsubishi Electric Semiconductor
|
| M54563FP M54563P/FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
| HIP0061 HIP0061AS1 HIP0061AS2 |
60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array
60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array
60V 3.5A 3-Transistor Common Source ESD Protected Power MOSFET Array
|
INTERSIL[Intersil Corporation]
|
| M54583 M54583P M54583PNBSP |
From old datasheet system
M54583P Darlington Transistor Array
8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electronics America Inc
Mitsubishi Electric Semiconductor
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| MAGX-000035-09000P MAGX-000035-PB3PPR |
GaN on SiC D-Mode Transistor Technology Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| DDC144NS |
100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| MC3346-D |
General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays
|
ON Semiconductor
|
