| PART |
Description |
Maker |
| M395T6553GZ4 M470T5663FB3 M470T5663QZH3 M470T2864Q |
DDR2 SDRAM Memory
|
Samsung semiconductor
|
| M378T2863EHS M378T2863FBS K4T1G044QE K4T1G044QF M4 |
DDR2 SDRAM Memory
|
Samsung semiconductor
|
| HYB18T512160AC-3.7 HYB18T512160AC-5 HYB18T512400AC |
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 400 (3-3-3) Available 2Q04
|
Infineon
|
| HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM
512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| BR34E02FVT-3 |
Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules)
|
Rohm
|
| EBE10RD4ABFA |
1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) 1GB的注册DDR2 SDRAM DIMM内存28M的字× 72位，1个等级）
|
Elpida Memory, Inc.
|
| HY5PS1G431LF-C4 HY5PS1G431LF-C5 HY5PS1G831LF-C4 HY |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AS4DDR232M72PBG AS4DDR232M72PBG-3_ET AS4DDR232M72P |
32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| EDE1108ACBG-6E-E EDE1116ACBG-8E-E EDE1104ACBG-5C-E |
1G bits DDR2 SDRAM
|
Elpida Memory
|
| MT47H256M8 MT47H512M4 |
(MT47HxxxMxx) DDR2 SDRAM
|
Micron
|
