| PART |
Description |
Maker |
| SD52-150-R SD52-151-R SD52-100-R SD52-101-R SD52-1 |
High Power Density, Low Profile, Shielded Inductors
|
Cooper Bussmann, Inc.
|
| FX5545G005 |
Industry Smallest and Low Profile 5W 1.5A DC/DC Buck Converter with High Output Density Power
|
Vishay
|
| FX5545G205 |
Industry Smallest and Low Profile 8W 2.5A DC/DC Buck Converter with High Output Density Power
|
Vishay
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 200F 209S12FA |
LOW COST, HIGH POWER DENSITY 24 PIN DIP COMPATIBLE, 2.25W LAN DC/DC CONVERTERS
|
Make-Ps
|
| FX5545G2063V3T2 FX5545G206 FX5545G2063V3B1 FX5545G |
Industry Smallest and Low Profile 15W, 2.5A DC/DC Boost Converter with High Output Power Density
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SD10-100-R SD10-150-R SD10-151-R SD10-1R5-R SD10-4 |
SD Series High Power Density, Low Profile, Shielded Inductors
SD Series High Power Density, Low Profile, Shielded Inductors
|
Cooper Bussmann, Inc.
|
| FX5545G1052V7T2 FX5545G105 FX5545G1052V7B1 FX5545G |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| HC3-1R0-R HC3-2R2-R HC3-3R3-R HC3-4R7-R HC3-5R6-R |
High Density, high current/low voltage applications
|
Cooper Bussmann, Inc.
|
| STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP40N03L-20 4886 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMicroelectronics
|
|
