PART |
Description |
Maker |
GS71116ATP-8I |
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI Technology
|
GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM 12ns 128K x 8 1Mb asynchronous SRAM 10ns 128K x 8 1Mb asynchronous SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32 128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
GSI[GSI Technology] GSI Technology, Inc.
|
N01M0818L1 N01M0818L1AN N01L0818L1AD-85I N01L0818L |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
MR0A16A MR2A16AYS35 MR2A16AVYS35 MR0A16AYS35 MR1A1 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64Kx 16位的3.3V异步磁阻随机存取内存 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64K的x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
|
EDI8L24128C12BC EDI8L24128C15BC |
12ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS 15ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS
|
White Electronic Designs
|
100C0347-TNC26 N01L083WC2AT2 100C0347 100C0347-BNC |
0 MHz - 400 MHz RF/MICROWAVE TRANSFER SWITCH, 0.5 dB INSERTION LOSS 1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
DAICO INDUSTRIES INC DAICO[DAICO Industries, Inc.] NANOAMP[NanoAmp Solutions, Inc.] http://
|
IDT707288S_L 707288_DS_26036 IDT707288S15PF IDT707 |
64K x 16 Asynchronous Bank-Switchable Dual-Port SRAM From old datasheet system HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
|
IDT[Integrated Device Technology]
|
GS71208TP-8T GS71208TP-8 |
8ns 128K x 8 1Mb asynchronous SRAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32 0.400 INCH, TSOP2-32
|
GSI Technology, Inc.
|
GS71208TP-8 |
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
|
GSI Technology, Inc.
|