PART |
Description |
Maker |
MADS-002200-1279OT MA4E2200A1-1141T MA4E2200D1-287 |
Surface Mount Zero Bias Schottky Detector Diodes
|
M/A-COM Technology Solutions, Inc.
|
MA4E931Z2-1261A |
Schottky Zero Bias Detector Diode
|
MACOM[Tyco Electronics]
|
BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管(培养基检测器和调音台的应用气密陶瓷封装垒二极管) Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG INFINEON TECHNOLOGIES AG
|
Q62702-A764 BAT30 |
silicon sohottlky diode RF detector low-power bias very low capaacitance For freguencies up to 25Ghz FILTER BANDPASS 2.4GHZ 1008 SMD silicon schottky diode (RF detector Low-power mixer Zerobias Very low capacitance for frequencies up to 25 GHz) From old datasheet system silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz)
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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CZRV3-55C10-G CZRV3-55C11-G CZRV3-55C13-G CZRV3-55 |
Zener Diodes, P-D=0.2Watts, V-Z=10V Zener Diodes, P-D=0.2Watts, V-Z=11V Zener Diodes, P-D=0.2Watts, V-Z=13V Zener Diodes, P-D=0.2Watts, V-Z=12V Zener Diodes, P-D=0.2Watts, V-Z=15V Zener Diodes, P-D=0.2Watts, V-Z=18V Zener Diodes, P-D=0.2Watts, V-Z=16V Zener Diodes, P-D=0.2Watts, V-Z=20V Zener Diodes, P-D=0.2Watts, V-Z=22V Zener Diodes, P-D=0.2Watts, V-Z=2.4V Zener Diodes, P-D=0.2Watts, V-Z=27V Zener Diodes, P-D=0.2Watts, V-Z=24V Zener Diodes, P-D=0.2Watts, V-Z=2.7V Zener Diodes, P-D=0.2Watts, V-Z=30V Zener Diodes, P-D=0.2Watts, V-Z=33V Zener Diodes, P-D=0.2Watts, V-Z=39V Zener Diodes, P-D=0.2Watts, V-Z=36V Zener Diodes, P-D=0.2Watts, V-Z=3V Zener Diodes, P-D=0.2Watts, V-Z=3.3V Zener Diodes, P-D=0.2Watts, V-Z=3.6V Zener Diodes, P-D=0.2Watts, V-Z=4.3V Zener Diodes, P-D=0.2Watts, V-Z=3.9V Zener Diodes, P-D=0.2Watts, V-Z=5.1V Zener Diodes, P-D=0.2Watts, V-Z=4.7V Zener Diodes, P-D=0.2Watts, V-Z=6.2V Zener Diodes, P-D=0.2Watts, V-Z=5.6V Zener Diodes, P-D=0.2Watts, V-Z=8.2V Zener Diodes, P-D=0.2Watts, V-Z=7.5V Zener Diodes, P-D=0.2Watts, V-Z=6.8V Zener Diodes, P-D=0.2Watts, V-Z=9.1V
|
Comchip Technology
|
BAT54T1_05 BAT54T1 BAT54T1G BAT54T105 |
30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES
|
ONSEMI[ON Semiconductor]
|
BAS125-04W BAS125-05W BAS125-06W BAS125W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE Preliminary data Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping application) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MBD301 MMBD301LT1 MMBD301L MBD301_D |
SILICON HOT-ARRIER DETECTOR AND SWITCHING SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
|
ONSEMI[ON Semiconductor]
|
SMS7630-001 SMS7630-005 SMS7630-006 SMS7630-011 SM |
Surface Mount Mixer and Detector Schottky Diodes 表面贴装调音台和探测器肖特基二极
|
Alpha Industries, Inc. Alpha Industries Inc
|
BAT54LT1 |
30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
|
Motorola Inc MOTOROLA[Motorola, Inc]
|
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