| PART |
Description |
Maker |
| ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-B |
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
AGILENT TECHNOLOGIES INC
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-38143- ATF38143 ATF-38143-BLK ATF-38143-TR1 AT |
DC-DC Converter, 15Watt, Input VDC: 18~75, Output VDC: 12, Max Output Current(A): 1.25, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40C
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| CF004-02 CF004-01 CF004-03 CF004 |
GaAs Pseudomorphic HEMT and MESFET Chips
|
MIMIX[Mimix Broadband]
|
| NE32484A_98 NE32484A NE32484AS NE32484A-T1 NE32484 |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
NEC[NEC]
|
| NE32684A NE32684A-T1 NE32684AS |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
NEC
|
| NE32400_98 NE32400 NE3240098 NE32400M NE32400N |
Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA.
|
NEC[NEC]
|
| MGF4953A11 |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| FHX04LG FHX05LG FHX06LG |
Super Low Noise HEMT
|
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
N.A.
|
| MGF4964BL |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| FHX05LG |
Super Low Noise HEMT
|
Fujitsu Limited
|
| FHX13LG FHX14LG |
Super Low Noise HEMT
|
Eudyna Devices Inc
|
