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For pseudomorphic Found Datasheets File :: 271 Search Time::1.344ms
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				ETC HP[Agilent(Hewlett-Packard)]
Part No.	ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text	pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-34143 Features * Low Noise Figure * Excellent Uniformity in Product Specifications * 800 micron Gate Width * Low Cost Surface Mount Small Plastic Package SOT-3...
Description	评估板，亚欧信托基金X14300兆赫930-1990兆赫频率 Low Noise pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	111.58K / 15 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text	pseudomorphic HEMT Technical Data ATF-36077 Features * PHEMT Technology * Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz * High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz * Low Parasitic C...
Description	1.5-18GHz surface mount pseudomorphic HEMT 2-18 GHz Ultra Low Noise pseudomorphic HEMT
File Size	41.62K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text	pseudomorphic HEMT Technical Data ATF-36163 Features * Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz * Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz * Maximum Available Gain: 11 dB Typica...
Description	1.5-18 GHz Surface Mount pseudomorphic HEMT
File Size	84.64K / 10 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LPV3000 LP3000
OCR Text	...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 3000 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source ...
Description	2W Power PHEMT
File Size	46.89K / 2 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STGP12NB60K
OCR Text	pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High linearity and P1dB * Low noise figure Description Agilent Technologies's ATF-521P8 is a single-voltage high linearity, low noise E-pHEMT ...
Description	SHORT CIRCUIT PROOF PowerMESH?? IGBT
File Size	867.25K / 24 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2
OCR Text	pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High Linearity and P1dB * Low Noise Figure Description Agilent Technologies's ATF501P8 is a single-voltage high linearity, low noise E-pHEMT h...
Description	Agilent ATF-501P8 High Linearity Enhancement Mode pseudomorphic HEMT in 2x2 mm2 LPCC Package
File Size	152.86K / 20 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)]
Part No.	ATF55143 ATF-55143 ATF-55143- ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2
OCR Text	pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features * High linearity performance * Single Supply Enhancement Mode Technology [1] * Very low noise figure * Excellent uniformity in product specifications * 400 micron g...
Description	Agilent ATF-55143 Low Noise Enhancement Mode pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	168.79K / 21 Page	View it Online	Download Datasheet

				UMS[United Monolithic Semiconductors]
Part No.	EC2612 EC2612-99F_00 EC2612-99F/00
OCR Text	pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15m gate pseudomorphic high electron mobility transistor (0.15m PHEMT) technology. Gate width is 120m and the 0.15m T-shaped aluminium gate features low...
Description	40GHz Super Low Noise PHEMT
File Size	109.89K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MGA-52543- MGA-52543-TR2 MGA-52543-TR1 MGA-52543-BLK MGA52543
OCR Text	...cost-effective, reliable PHEMT (pseudomorphic High Electron Mobility Transistor) process. It is housed in the SOT-343 (SC70 4-lead) package. This package offers miniature size (1.2 mm by 2.0 mm), thermal dissipation, and RF characteristics....
Description	Low Noise Amplifier
File Size	211.32K / 16 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Electronic Theatre Controls, Inc.
Part No.	RMPA0913C-58
OCR Text	...rity.The device uses Raytheon's pseudomorphic High Electron Mobility Transistor (pHEMT) process. Positive supply voltage of 3.5V, nominal Power Added Efficiency of 56%, typical, at power out of 31.5 dBm Power Added Efficiency of 40%, typica...
Description	3.5V AMPS/CDMA Power Amplifier
File Size	254.72K / 6 Page	View it Online	Download Datasheet

For pseudomorphic Found Datasheets File :: 271 Search Time::1.344ms
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