| PART |
Description |
Maker |
| FM27C040N150 FM27C040N90 FM27C040Q120 FM27C040Q150 |
4/194/304-Bit 512K x 8 High Performance CMOS EPROM
4,194,304-Bit 512K x 8 High Performance CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| M5M44170-10S M5M44170-7S |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模,194,304位（262,144字由16位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| VG2617400DJ-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM
|
Powerchip
|
| TC514100AJ TC514100AP TC514100ASJ TC514100AZ-60 |
4,194,304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC5117400BST-70 TC5117400BST-60 TC5117400BSJ |
4,194,304 WORD X 4 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V |
4,194,304 x 4 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| THMY644071BEG |
4/194/304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
4,194,304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
| M5M44170-10S M5M44170-7 M5M44170-8 M5M44170AJ M5M4 |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| MSC23409CL-XXDS9 MSC23409C |
4,194,304-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| 5164165A |
4,194,304-Word ′ 6-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
