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				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4A-7 ADS7608A4A-75 ADS7608A4A-7.5
OCR Text	4,194,304 words x 8 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable ...
Description	Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
File Size	209.31K / 8 Page	View it Online	Download Datasheet

				Advanced Micro Devices
Part No.	AM29LV320B AM29LV320MB100 AM29LV320MB100R AM29LV320MB110 AM29LV320MB110R AM29LV320MB120 AM29LV320MB120R AM29LV320MB90R AM29LV320MT AM29LV320MT100 AM29LV320MT100R AM29LV320MT110 AM29LV320MT110R AM29LV320MT120 AM29LV320MT120R AM29LV320MT90R
OCR Text	4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES Single power supply op...194,304 bytes. The device has an 8-bit/16-bit bus and can be programmed either in the host system or...
Description	32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
File Size	915.81K / 61 Page	View it Online	Download Datasheet

				Advanced Micro Devices
Part No.	AM29LV320D AM29LV320DB120 AM29LV320DB90 AM29LV320DB90R AM29LV320DT120 AM29LV320DT90 AM29LV320DT90EC AM29LV320DT90ED AM29LV320DT90EF AM29LV320DT90EI AM29LV320DT90R
OCR Text	...ANK. Am29LV320D 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITE...194,304 bytes of 8 bits each. Word mode data appears on DQ0-DQ15; byte mode data appears on DQ0-DQ7....
Description	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	866.42K / 55 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128163G5-A75-9JF UPD45128163G5-A80 UPD45128163G5-A80-9JF UPD45128441 UPD45128441G5-A10 UPD45128441G5-A10-9JF UPD45128441G5-A10B UPD45128441G5-A10B-9JF UPD45128441G5-A75 UPD45128441G5-A75-9JF UPD45128441G5-A80 UPD45128441G5-A80-9JF UPD45128841 UPD45128841G5-A10 UPD45128841G5-A10-9JF UPD45128841G5-A10B UPD45128841G5-A10B-9JF UPD45128841G5-A75 UPD45128841G5-A75-9JF UPD45128841G5-A80 UPD45128841G5-A80-9JF
OCR Text	4-bank, LVTTL Description The PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 (word x bit x bank), respectiv...
Description	128M-bit Synchronous DRAM 4-bank, LVTTL
File Size	1,081.23K / 92 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD98405 UPD98405GL-PMU
OCR Text	...r Receive ATM interface & FIFO (4 cells) Receive framer DMA output block PMD PMD interface & Clock recovery & Clock synthesizer ...194 CBE0_B 195 CWE_B 196 COE_B 197 INITD 198 SCLK 199 GND 200 ROMA15 201 ROMA14 202 ROMA13 203 ROMA1...
Description	155M ATM INTEGRATED SAR CONTROLLER
File Size	323.42K / 64 Page	View it Online	Download Datasheet

				Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
Part No.	AT27LV040A AT27LV040A-12 AT27LV040A-12JC AT27LV040A-12JI AT27LV040A-12TC AT27LV040A-12TI AT27LV040A-15 AT27LV040A-15JC AT27LV040A-15JI AT27LV040A-15TC AT27LV040A-15TI
OCR Text	...ndustrial Temperature Ranges 4 Megabit (512K x 8) Low Voltage OTP CMOS EPROM Description The AT27LV040A is a high performance, low power, low voltage, 4,194,304 bit onetime programmable read only memory (OTP EPROM) organized as 512K ...
Description	4 Megabit 512K x 8 Low Voltage OTP CMOS EPROM 512K X 8 OTPROM, 120 ns, PDSO32 High Speed CMOS Triple 2-Channel Analog Multiplexers/Demultiplexers 16-SOIC -55 to 125
File Size	225.89K / 9 Page	View it Online	Download Datasheet

				CYPRESS[Cypress Semiconductor]
Part No.	CY7C1484V33 CY7C1484V33-167AC CY7C1484V33-167BGC CY7C1484V33-167BZC CY7C1484V33-200AC CY7C1484V33-200BGC CY7C1484V33-200BZC CY7C1484V33-250AC CY7C1484V33-250BGC CY7C1484V33-250BZC CY7C1485V33 CY7C1485V33-167AC CY7C1485V33-167BGC CY7C1485V33-167BZC CY7C1485V33-200AC CY7C1485V33-200BGC CY7C1485V33-200BZC CY7C1485V33-250AC CY7C1485V33-250BGC CY7C1485V33-250BZC
OCR Text	...st access time: 2.6, 3.0, and 3.4 ns Optimal for depth expansion Single 3.3V -5% and +5% power supply VDD Separate VDDQ for 3.3V or 2.5V Com...194,304 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for ...
Description	2M x 36/4M x 18 Pipelined DCD SRAM
File Size	505.55K / 29 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...ESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), re...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...ESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), acce...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
Part No.	IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL-10LQI IS61LV25616AL-10T IS61LV25616AL-10TI IS61LV25616AL-12B IS61LV25616AL-12K IS61LV25616AL-12KI IS61LV25616AL-12T IS61LV25616AL-12TI 61LV25616AL
OCR Text	... IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques,...
Description	20 AMP MINIATURE PC BOARD RELAY 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
File Size	64.23K / 12 Page	View it Online	Download Datasheet

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