| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5001 |
Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)
|
Rohm
|
| 2SA1834 |
Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)
|
ROHM[Rohm]
|
| KSC2982 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DT |
NPN Epitaxial Silicon Transistor
Strobe Flash & Medium Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| 2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| GT5G133 |
IGBT for strobe flash
|
TOSHIBA
|
