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| Part No. |
K4E151611C-TC50
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| OCR Text |
...out v ss ground ras row address strobe ucas upper column address strobe lcas lower column address strobe w read/write input oe data output enable v cc power(+5v) power(+3.3v) n.c no connection v cc dq0 dq1 dq2 dq3 v cc dq4 dq5 dq6 dq7 n.c n... |
| Description |
1M X 16 EDO DRAM, 50 ns, PDSO44
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| File Size |
558.18K /
35 Page |
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it Online |
Download Datasheet
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HMT325S6BFR6C-H9
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| OCR Text |
...i-directional differential data strobe ? 8 bit pre-fetch ? burst length (bl) switch on-the-fly: bl 8 or bc (burst chop) 4 ? on die termination (odt) supported ? rohs compliant b48614/178.104.2.80/2010-07-13 16:20
a pcpcwm_4828... |
| Description |
256M X 64 DDR DRAM MODULE, DMA204
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| File Size |
474.71K /
54 Page |
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it Online |
Download Datasheet |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS128M4BT-6K
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| OCR Text |
...lock cycle ? bidirectional data strobe (dqs) is transmitted and received with data, to be used in capturing data at the receiver ? dqs is edge-aligned with data for reads and is center- aligned with data for writes ? differential clock i... |
| Description |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
2,500.58K /
80 Page |
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it Online |
Download Datasheet |
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Integrated Silicon Solution
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| Part No. |
IS42S32800D
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| OCR Text |
...chip select ras row address strobe command cas column address strobe command v dd dq0 v dd q dq1 dq2 v ss q dq3 dq4 v dd q dq5 dq6 v ss q dq7 nc v dd dqm0 we cas ras cs a11 ba0 ba1 a10 a0 a1 a2 dqm2 v dd nc dq16 v ss q dq17 dq18 v... |
| Description |
8M x 32 256Mb SYNCHRONOUS DRAM
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| File Size |
862.59K /
60 Page |
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it Online |
Download Datasheet |
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Price and Availability
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