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  transfer-mold Datasheet PDF File

For transfer-mold Found Datasheets File :: 3732    Search Time::1.843ms    
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    NTHD4502N-12

ON Semiconductor
Part No. NTHD4502N-12
OCR Text ...eal for applications where heat transfer is required. ? these devices are pb ? free and are rohs compliant applications ? dc ? dc buck or bo...mold gate burrs shall not exceed 0.13 mm per side. 4. leadframe to molded body offset in horizontal ...
Description Power MOSFET

File Size 106.92K  /  6 Page

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    MPXV6115V12

Freescale Semiconductor, Inc
Part No. MPXV6115V12
OCR Text ...v6115v to adc 100 nf 51 k 47 pf transfer function: v out = v s *[(0.007652*p) + 0.92] (pressure error) v out vs. vacuum transfer funct...mold protrusion. 4. maximum mold protrusion 0.15 (0.006). 5. all vertical surfaces 5 typical draft....
Description High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned

File Size 96.57K  /  9 Page

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    PS21964-C PS21964-A

Mitsubishi Electric Semiconductor
Part No. PS21964-C PS21964-A
OCR Text ... PS21964/-A/-C PS21964/-A/-C transfer-mold TYPE transfer-mold TYPE INSULATED TYPE INSULATED TYPE PS21964-A INTEGRATED POWER FUNCTIONS 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion ...
Description 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

File Size 127.66K  /  10 Page

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    NTHD4508N NTHD4508NT1G NTHD4508NT1

ONSEMI[ON Semiconductor]
Part No. NTHD4508N NTHD4508NT1G NTHD4508NT1
OCR Text ...Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is Available http://onsemi.com V(BR)DSS 20 V RDS(on) TYP 60 mW @ 4....MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL ...
Description Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™
POWER MOSFET 20 V, 4.1 A, DUAL N−CHANNEL CHIPFET

File Size 55.16K  /  6 Page

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    MC3346

ON Semiconductor
Part No. MC3346
OCR Text ... nf ? 3.25 ? db forward current transfer ratio (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 khz) h fe ? 110 ? ? short circuit input impedance...mold flash. 5. rounded corners optional. f hg d k c seating plane n ? t ? 14 pl m 0.13 (0.005) l m j...
Description General Purpose Transistor Array One Differentially Connected Pair

File Size 144.51K  /  5 Page

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    NTHD4502N NTHD4502NT1 NTHD4502NT1G

ONSEMI[ON Semiconductor]
Part No. NTHD4502N NTHD4502NT1 NTHD4502NT1G
OCR Text ... for * Applications Where Heat Transfer is Required. Pb-Free Package is Available V(BR)DSS 30 V 110 mW @ 4.5 V Ideal Device for Applica...MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL ...
Description Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™
POWER MOSFET 30 V, 3.9 A, DUAL N−CHANNEL CHIPFET
Power MOSFET 30 V, 3.9 A, Dual N&#8722;Channel ChipFET 2200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 61.01K  /  6 Page

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    Motorola Semiconductor Products
Part No. MP3V5100
OCR Text ...) 3 2 1 0 100 typical min max 0 transfer function: v out = v s *(0.009 * p+0.06) (pressure e rror *temp. factor * 0.009 * v s ) v s = 3...mold protrusion. 4. maximum mold protrusion 0.15 (0.006). 5. all vertical surfaces 5? typ...
Description Integrated Silicon Pressure Sensor

File Size 134.86K  /  9 Page

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    PS21964-4A PS21964-4 PS21964-4C PS21964-4W

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. PS21964-4A PS21964-4 PS21964-4C PS21964-4W
OCR Text transfer-mold TYPE INSULATED TYPE PS21964-4 INTEGRATED POWER FUNCTIONS 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS * * ...
Description 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

File Size 175.65K  /  10 Page

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    PS21962-S

Mitsubishi Electric Semiconductor
Part No. PS21962-S
OCR Text ...Module> PS21962-S PS21962-S transfer-mold TYPE transfer-mold TYPE INSULATED TYPE INSULATED TYPE PS21962-S INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. ...
Description 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

File Size 88.77K  /  8 Page

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    MPVZ5010GW7U MPVZ5010GW6U MPVZ5010G6T1 MPVZ5010G6U MPVZ5010G MPVZ5010G7U

Freescale Semiconductor, Inc
Part No. MPVZ5010GW7U MPVZ5010GW6U MPVZ5010G6T1 MPVZ5010G6U MPVZ5010G MPVZ5010G7U
OCR Text ...4.0 3.0 Output (V) 2.0 1.0 0 Transfer Function (kPa): Vout = VS x (0.09 x P + 0.04) 5.0% VFSS VS = 5.0 Vdc TEMP = 0 to 85C MAX MIN ...MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5 TYPICAL DRAFT. ...
Description Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

File Size 369.54K  /  14 Page

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For transfer-mold Found Datasheets File :: 3732    Search Time::1.843ms    
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