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to-205af Datasheet PDF File

For to-205af Found Datasheets File :: 180 Search Time::2.688ms
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				International Rectifier
Part No.	IRLF230 2306
OCR Text	...s of power MOSFETs are designed to be operated with level logic gate-tosource voltage of 5V. In addition to the well established characteris...205AF (Modified TO-39) All dimensions are shown millimeters (inches) WORLD HEADQUARTERS: 233 K...
Description	From old datasheet system HEXFET TRANSISTOR
File Size	72.28K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3
OCR Text	...otal dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil ...205AF Ordering Information RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL PART NUMBER/BRAND E...
Description	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, to-205af Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
File Size	80.46K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	JANTXV2N6796 JANTX2N6796
OCR Text	... HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39) All dimensions are shown millimeters (inches) WORLD HEADQUARTERS: 233 K...
Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A) POWER MOSFET N-CHANNEL(BVdss=100V Rds(on)=0.18ohm Id=8.0A)
File Size	197.90K / 6 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
OCR Text	... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...205AF D G S CAUTION: These devices are sensitive to electrostatic discharge; follow prop...
Description	3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, to-205af From old datasheet system 3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
File Size	45.44K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FRL9230D FRL9230R FRL9230H FN3245
OCR Text	to-205af Features * 3A, -200V, RDS(on) = 1.30 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance P...
Description	From old datasheet system 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs 3A/ -200V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFETs
File Size	46.78K / 6 Page	View it Online	Download Datasheet

For to-205af Found Datasheets File :: 180 Search Time::2.688ms
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