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surviving Datasheet PDF File

For surviving Found Datasheets File :: 165 Search Time::2.703ms
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				IRF[International Rectifier]
Part No.	IRHN9230
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HA...
Description	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
File Size	87.57K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHN7450SE
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech...
Description	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
File Size	80.82K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8450 IRHM7450
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET...
Description	RADIATION HARDENED POWER MOSFET REPETITIVE AVALANCHE AND dv/dt RATED
File Size	307.49K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM7460SE
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech...
Description	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)
File Size	99.74K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc. MAXWELL TECHNOLOGIES
Part No.	54HC4046RP 54HC4046RPD
OCR Text	...n a low power state. Capable of surviving space environments, the 54HC4046RP is ideal for many satellite, spacecraft, and space probe missions. The radiation hardened RADPAK(R) technology incorporates radiation shielding in the microcircuit...
Description	Phase-Locked Loop PHASE LOCKED LOOP, DIP16
File Size	221.40K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH8250 IRH7250
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	313.63K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM9230
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HA...
Description	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
File Size	145.28K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHN8250 IRHN7250
OCR Text	...n, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs...
Description	TRANSISTOR N-CHANNEL(BVdss=200V Rds(on)=0.10ohm Id=26A) TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
File Size	523.50K / 14 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF658
OCR Text	...Nitride Passivated * Capable of surviving Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive MRF658 65 W, 512 MHz RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 MAXIMUM RATINGS Rating ...
Description	RF POWER TRANSISTOR NPN SILICON
File Size	92.04K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8360 IRHM7360
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET? TRANSISTOR
File Size	318.57K / 12 Page	View it Online	Download Datasheet

For surviving Found Datasheets File :: 165 Search Time::2.703ms
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