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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
S6C0655
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| OCR Text |
...with the rising edge of CPV and stored in the first shift register. While stored pulse is transferred to the next register at the next rising edge of CPV, a new pulse is stored simultaneously. Output pin (G1 to G128) supplies VGG voltage or... |
| Description |
120 / 128 CHANNEL TFT-LCD GATE DRIVER
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| File Size |
132.01K /
16 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
S6C0657
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| OCR Text |
...with the rising edge of CPV and stored in the first shift register. While stored pulse is transferred to the next register at the next rising edge of CPV, a new pulse is stored simultaneously. Output pin (G1 to G263) supplies VGG voltage or... |
| Description |
263 / 256 CHANNEL TFT-LCD GATE DRIVER
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| File Size |
115.52K /
15 Page |
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it Online |
Download Datasheet |
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SAMES[Sames]
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| Part No. |
SA2005PSA SA2005 SA2005P SA2005PPA
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| OCR Text |
...
motors Calibration and setup stored on external EEPROM - no trim-pots required Flexible programmable features providing ease of implementation for meter manufacturers Per phase energy direction and voltage fail indication Precision oscil... |
| Description |
Programmable Three Phase Power / Energy Metering IC for Stepper Motor / Impulse Counter Applications 可编程三相功电能计量集成电路步进电机/脉冲计数器的应用
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| File Size |
190.84K /
16 Page |
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it Online |
Download Datasheet |
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SAMES[Sames]
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| Part No. |
SA2532KB SA2532KA
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| OCR Text |
...entered number is automatically stored in the LNR RAM. The capacity of the LNR RAM is 31 digits. If a number greater than 31 digits is entered, the LNR facility will be inhibited (Until new entries < 32 digits) and further entries will be b... |
| Description |
SINGLE CHIP TELEPHONE FOR INDIA
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| File Size |
185.09K /
21 Page |
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it Online |
Download Datasheet |
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SAMES[Sames]
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| Part No. |
SA2532P
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| OCR Text |
...entered number is automatically stored in the LNR RAM. The capacity of the LNR RAM is 31 digits. If a number greater than 31 digits is entered, the LNR facility will be inhibited (Until new entries < 32 digits) and further entries will be b... |
| Description |
ONE MEMORY SINGLE CHIP TELEPHONE
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| File Size |
147.22K /
21 Page |
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it Online |
Download Datasheet |
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Wolfspeed
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| Part No. |
C3M0065100K
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| OCR Text |
...er capacitance 4.0 e oss c oss stored energy 16 j fig. 16 e on turn-on switching energy (body diode fwd) 190 j v ds = 700 v, v gs = -4 v/15 v, i d = 20a, r g(ext) = 2.5?, l= 130 h, t j = 150oc fig. 26 e off turn off switching ener... |
| Description |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
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| File Size |
927.98K /
11 Page |
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it Online |
Download Datasheet |
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SAMES[Sames]
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| Part No. |
SA9101
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| OCR Text |
... link bits. This information is stored in special status registers. - Generation of control signals to synchronize the CRC checker, the parity generator, and the Receive Speech Memory control unit. If the multi-frame format is selected, CRC... |
| Description |
PCM FRAME ALIGNER
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| File Size |
705.32K /
40 Page |
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it Online |
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Wolfspeed
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| Part No. |
C3D10065I
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| OCR Text |
... = 1 mhz fig. 6 e c capacitance stored energy 3.6 j v r = 400 v fig. 7 note: this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit note r jc thermal resistance from ju... |
| Description |
10A, 650V, Z-Rec? Schottky, TO-220-A package with advanced isolation
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| File Size |
568.52K /
6 Page |
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it Online |
Download Datasheet |
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