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  pulsed Datasheet PDF File

For pulsed Found Datasheets File :: 55487    Search Time::1.547ms    
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    TY Semiconductor Co., Ltd
Part No. CJQ4953
OCR Text ... -0 -5 -10 -15 -20 -25 t a =25 pulsed t a =25 pulsed i s ?? v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed t a =25 pulsed transfer characteristics drain current ...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 925.65K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4828
OCR Text ... 10s ) (note 1) i d 4.5 a pulsed drain current (note 2) i dm 20 a power dissipation p d 1.25 w thermal resistance from junction to ambient (t 10s ) (note 1) r ja 100 /w avalanche current (note 2) i ar, i as 19 ...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 898.69K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4459
OCR Text ... drain current i d -6.5 a pulsed drain current (note 1) i dm -30 a power dissipation (note 2) p d 1.25 w thermal resistance from junction to ambient (t 10s ) (note 3) r ja 100 /w avalanche current (note 1) i ar, i ...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 607.79K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4438
OCR Text ... current (note 1) i d 8.2 a pulsed drain current (note 2) i dm 40 a power dissipation p d 1.25 w thermal resistance from junction to ambient (note 1) r ja 100 /w junction temperature t j 150 storage temperatu...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 415.40K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4435
OCR Text ...(t = 10s ) (note 1) i d -9.1 pulsed drain current i dm -50 drain-source diode forward current (t = 10s ) (note 1) i s -2 a power dissipation (t = 10s ) p d 1.4 w thermal resistance from junction to ambient (t 10s ) (not...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 604.59K  /  3 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
Part No. BUZ11
OCR Text ...us) at tc = 25 c drain current (pulsed) total dissipation at tc = 25 c storage temperature max. operating junction temperature din humidity category (din 40040) iec climatic category (din iec 68-1) value 50 50 20 33 134 90 -65 to 175 175 e...
Description N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET MOSFET
   N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET?MOSFET

File Size 127.27K  /  3 Page

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    UPA2670T1R UPA2670T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2670T1R UPA2670T1R-E2-AX
OCR Text ...stics (t a = 25c) note: ? 1. pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90%...
Description DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m

File Size 256.75K  /  7 Page

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    UPA2631T1R UPA2631T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2631T1R UPA2631T1R-E2-AX
OCR Text ...stics (t a = 25c) note: ? 1. pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90%...
Description P-CHANNEL MOSFET -20 V, -8.0 A, 32 m

File Size 236.36K  /  7 Page

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    UPA2600T1R UPA2600T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2600T1R UPA2600T1R-E2-AX
OCR Text ...stics (t a = 25c) note: ? 1. pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10...
Description N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

File Size 234.58K  /  7 Page

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    PBSS4260QA

NXP Semiconductors
Part No. PBSS4260QA
OCR Text ...tance i c = 1 a; i b = 0.1 a; pulsed; t p 300 s; 0.02 ; t amb = 25 c - 130 180 m nxp semiconductors pbss4260qa 60 v, 2 a npn low vcesat (biss) transistor pbss4260qa all information provided in this document is subject to legal dis...
Description 60 V, 2 A NPN low VCEsat (BISS) transistor

File Size 244.54K  /  17 Page

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