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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
IRFW740S
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| OCR Text |
...v ds = 50 v 3. 2 50 m s puls e t est i d , drain current [a] v gs , gate-source voltage [v] 0 10203040 0.0 0.3 0.6 0.9 1.2 @ n ote : t j = 25 o c v gs = 20 v v gs = 10 v r ds(on) , [ w ] drain-source on-resistance i d ... |
| Description |
400V N-Channel Power MOSFET(婕???靛?涓?00V??娌??澧?己?????OS?烘?搴??)
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| File Size |
238.96K /
7 Page |
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it Online |
Download Datasheet
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| Part No. |
V23990-P586-A
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| OCR Text |
...mws einschaltverlustenergie pro puls tj=125c tbd turn-off energy loss per pulse e off tj=25c mws abschaltverlustenergie pro puls tj=125c tbd input capacitance c iss tj=25c f=1mhz 0 25 pf eingangskapazit?t tj=125c tbd output capacitance c os... |
| Description |
30 A, 600 V, N-CHANNEL IGBT
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| File Size |
101.39K /
5 Page |
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it Online |
Download Datasheet |
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EUPEC[eupec GmbH]
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| Part No. |
FS35R12KE3G
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| OCR Text |
...ad) Einschaltverlustenergie pro puls turn on energy loss per pulse Ausschaltverlustenergie pro puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulindiktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lea... |
| Description |
IGBT-Modules
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| File Size |
111.58K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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