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				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
File Size	124.69K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
File Size	62.82K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	107.58K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	111.68K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TP75
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY 连接器附
File Size	46.28K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S281632D-NC60 K4S281632D-NC75 K4S281632D-NC7C K4S281632D-NL1H K4S281632D-NL60 K4S281632D-NL75 K4S281632D-NL7C K4S281632D-TC K4S281632D-TC_L60 K4S281632D-TC75 K4S281632D-TL75 K4S281632D-TC_L1H K4S281632D-TC_L1L K4S281632D-TC_L55 K4S281632D-TC_L75 K4S281632D-TC_L7C K4S281632D-TC/L1H K4S281632D-TC/L1L K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L75 K4S281632D-TC/L7C K4S281632D-TL60 K4S281632D-TC7C K4S281632D-TL55 K4S281632D-TL7C
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
File Size	110.59K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same d...
Description	IC REG ULDO DUAL 2.8/1.5V 6-MLF 8Mx16 SDRAM 54CSP 2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
File Size	66.22K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text	...logy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same devic...
Description	512Mb B-die SDRAM Specification
File Size	147.30K / 15 Page	View it Online	Download Datasheet

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