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				STMicroelectronics N.V. ST Microelectronics 意法半导
Part No.	M29F400T-55M1R M29F400T-55M3R M29F400T-55N1R M29F400T-55N6R M29F400T-55N3R M295V400T-120M3R M295V400T-120N3R M295V400T-55M3R M295V400T-70M3R M295V400T-70N3R M295V400T-90M3R M295V400T-90N3R M295V400T-55N3R M295V400B-70M1R M29F400B M295V400B-70M3R M295V400B-70M3TR M295V400B-70M6TR M295V400B-70M6R M295V400T-120N6TR M295V400T-55N6TR M295V400B-120M3R M295V400B-120M1TR M295V400B-120M1R M29F400B-120M6TR M295V400B-120N6R M29F400B-55M3TR M29F400B-55M1R M29F400B-55N3R M295V400T-70N6TR M295V400B-55M1R M295V400T-70M1R M295V400T-90N1R M295V400T-120M1R M295V400T-55N1TR M295V400T-55N6R M29F400B-90M3TR M29F400B-90M3R M295V400B-90M3TR M295V400T-120N3TR M295V400T-70M3TR M295V400T-90N3TR M295V400B-55N1R M295V400B-90M1R M295V400B-120M6R M29F400B-90M6TR M29F400B-70N1TR M29F400B-90N6TR M295V400B-90N6R M295V400T-70M6TR M295V400B-55N1TR M29F400T-90N6TR M29F400T-120N3R M295V400B-120N3R -M29F400T-55M3TR -M29F400T-55M3R -M295V400T-90N6R -M295V400T-90N6TR -M295V400T-70M1TR -M295V400B-90M1R -M295V400B-55N1R -M295V400B-55N3R -M295V400B-55N6TR -M295V400B-55N6R M29F400B-70M6R
OCR Text	...program- mers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- november 1999 1/34 this is information on a product stil l in production but n...
Description	Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SOIC -40 to 85 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽，启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Precision Low-Power Single Supply Operational Amplifier 8-SOIC -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Precision Low-Power Single Supply Operational Amplifier 8-PDIP -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 High-Speed, Low-Power, Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Quad Precision Low-Power Single Supply Operational Amplifier 14-PDIP 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 High-Speed, Low-Power, Precision Dual Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Single Inverter Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Single 2-Input Exclusive-OR Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Single 2-Input Exclusive-OR Gate 5-SC70 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP 0 to 70 4兆位512KB的x856Kb的x16插槽，启动座单电源闪 Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85 Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 Precision Low-Power Single Supply Operational Amplifier 8-SOIC 0 to 70 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-TSSOP -40 to 85 Quad Precision Low-Power Single Supply Operational Amplifier 16-SOIC High-Speed, Low-Power, Precision Dual Operational Amplifier 8-SOIC -55 to 125 Excalibur High-Speed Low-Power Precision Dual Operational Amplifier 8-PDIP CONNECTOR ACCESSORY
File Size	236.29K / 34 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	M29W800AB M29W800AB100M1T M29W800AB100M5T M29W800AB100M6T M29W800AB100N1T M29W800AB100N5T M29W800AB100N6T M29W800AB100ZA1T M29W800AB100ZA5T M29W800AB100ZA6T M29W800AB120M1T M29W800AB120M5T M29W800AB120M6T M29W800AB120N1T M29W800AB120N5T M29W800AB120N6T M29W800AB120ZA1T M29W800AB120ZA5T M29W800AB120ZA6T M29W800AB80M1T M29W800AB80M5T M29W800AB80M6T M29W800AB80N1T M29W800AB80N5T M29W800AB80N6T M29W800AB80ZA1T M29W800AB80ZA5T M29W800AB80ZA6T M29W800AB90M1T M29W800AB90M5T M29W800AB90M6T M29W800AB90N1T M29W800AB90N5T M29W800AB90N6T M29W800AB90ZA1T M29W800AB90ZA5T M29W800AB90ZA6T M29W800AT M29W800AT100M1T M29W800AT100M5T M29W800AT100M6T M29W800AT100N1T M29W800AT100N5T M29W800AT100N6T M29W800AT100ZA1T M29W800AT100ZA5T M29W800AT100ZA6T M29W800AT120M1T M29W800AT120M5T M29W800AT120M6T M29W800AT120N1T M29W800AT120N5T M29W800AT120N6T M29W800AT120ZA1T M29W800AT120ZA5T M29W800AT120ZA6T M29W800AT80M1T M29W800AT80M5T M29W800AT80M6T M29W800AT80N1T M29W800AT80N5T M29W800AT80N6T M29W800AT80ZA1T M29W800AT80ZA5T M29W800AT80ZA6T M29W800AT90M1T M29W800AT90M5T M29W800AT90M6T M29W800AT90N1T M29W800AT90N5T M29W800AT90N6T M29W800AT90ZA1T M29W800AT90ZA5T M29W800AT90ZA6T
OCR Text	...d programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make ...
Description	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
File Size	232.16K / 33 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	M29W800B M29W800B100M1R M29W800B100M1TR M29W800B100M5R M29W800B100M5TR M29W800B100M6R M29W800B100M6TR M29W800B100N1R M29W800B100N1TR M29W800B100N5R M29W800B100N5TR M29W800B100N6R M29W800B100N6TR M29W800B120M1R M29W800B120M1TR M29W800B120M5R M29W800B120M5TR M29W800B120M6R M29W800B120M6TR M29W800B120N1R M29W800B120N1TR M29W800B120N5R M29W800B120N5TR M29W800B120N6R M29W800B120N6TR M29W800B150M1R M29W800T100M1R M29W800T100M1TR M29W800T100M5R M29W800T100M5TR M29W800T100M6R M29W800T100M6TR M29W800T100N1R M29W800T100N1TR M29W800T100N5R M29W800T100N5TR M29W800T100N6R M29W800T100N6TR M29W800T 6670 M29W800T120M1R M29W800T120M1TR M29W800T120M5R M29W800T120M5TR M29W800T120M6R M29W800T120M6TR M29W800T120N1R M29W800T120N1TR M29W800T120N5R M29W800T120N5TR M29W800T120N6R M29W800T120N6TR M29W800T150M1R M29W800T150M1TR M29W800T150M5R M29W800T150M5TR M29W800T150M6R M29W800T150M6TR M29W800T90N6TR M29W800B150M1TR M29W800B150M5R M29W800B150M5TR M29W800B150M6R M29W800B150M6TR M29W800B150N1R M29W800B150N1TR M29W800B150N5R M29W800B150N5TR M29W800B150N6R M29W800B150N6TR M29W800B90M1R M29W800B90M1TR M29W800B90M5R M29W800B90M5TR M29W800B90M6R M29W800B90M6TR M29W800B90N1R M29W800B90N1TR M29W800B90N5R M29W800B9
OCR Text	...d programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, June 1999 44 1 TSOP48 (N) ...
Description	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory 8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Low Voltage Single Supply Flash Memory From old datasheet system
File Size	230.87K / 33 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 HYS64V16200GDL-75 HYS64V16200GDL-8 HYS64V32220GDL HYS64V32220GDL-7 HYS64V32220GDL-75 HYS64V16200GDL-7.5-D HYS64V32220GDL-7.5-D HYS64V16200GDL-7-D HYS64V32220GDL-7-D HYS64V16200GDL-7.5 HYS64V32220GDL-8-C2 HYS64V16200GDL-8-C2
OCR Text	...4 (256 MByte) non-parity module organisation Performance: -7 PC133 2-2-2 fCK tAC Clock frequency (max.) Clock access time 133 5.4 -7.5 PC133 3-3-3 133 5.4 -8 PC100 2-2-2 100 6 Units MHz ns * * * * Single +3.3V( 0.3V ) power sup...
Description	144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM\|16MX64\|CMOS\|DIMM\|144PIN\|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
File Size	102.13K / 16 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	HYS72V4120GU-10 HYS64V4120GU HYS64V4120GU-10
OCR Text	...cations 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 fCK tAC Max. Clock frequency Max. access time from ...
Description	3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module
File Size	71.97K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	M27V320-150M1
OCR Text	...s, word-wide and byte-wide. the organisation is selected by the signal level on the byte pin. when byte is at v ih the word-wide organisation is selected and the q15aC1 pin is used for q15 data output. when the byte pin is at v il the b...
Description	2M X 16 OTPROM, 150 ns, PDSO44
File Size	175.01K / 15 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	M29F100T-90N1RTR
OCR Text	...d programmers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- graming and erase on programming equipment, july 2000 1/30 tihs is information...
Description	64K X 16 FLASH 5V PROM, 90 ns, PDSO48
File Size	259.86K / 30 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 M27V320-100N1 M27V320-100N6 M27V320-120M1 M27V320-120M6 M27V320-120N1 M27V320-120N6 M27V320-150M1 M27V320-150M6 M27V320-150N1 -M27V320-100N1 -M27V320-150M6
OCR Text	...s, Word-wide and Byte-wide. The organisation is selected by the signal level on the BYTE pin. When BYTE is at VIH the Word-wide organisation is selected and the Q15A-1 pin is used for Q15 Data Output. When the BYTE pin is at VIL the Byte-wi...
Description	2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
File Size	143.44K / 15 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-100K6TR M27W400-100XB6TR M27W400-100XF6TR M27W400-100XK6TR M27W400-120B6TR M27W400-120F6TR M27W400-120K6TR M27W400-120XB6TR M27W400-120XF6TR M27W400-120XK6TR -M27W400-100XF6TR M27W256-80N6TR
OCR Text	...s, Word-wide and Byte-wide. The organisation is selected by the signal level on the BYTEVPP pin. When BYTEVPP is at VIH the Word-wide organisation is selected and the Q15A-1 pin is used for Q15 Data Output. When the BYTEVPP pin is at V IL t...
Description	4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
File Size	138.64K / 15 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	M29W400 M29W400B M29W400B-100M1R M29W400B-100M1TR M29W400B-100M5R M29W400B-100M5TR M29W400B-100M6R M29W400B-100M6TR M29W400B-100N1R M29W400B-100N1TR M29W400B-100N5R M29W400B-100N5TR M29W400B-100N6R M29W400B-100N6TR M29W400B-100ZA1R M29W400B-100ZA1TR M29W400B-100ZA5R M29W400B-100ZA5TR M29W400B-100ZA6R M29W400B-100ZA6TR M29W400B-120M1R M29W400B-120M1TR M29W400B-120M5R M29W400B-120M5TR M29W400B-120M6R M29W400B-120M6TR M29W400B-120N1R M29W400B-120N1TR M29W400B-120N5R M29W400B-120N5TR M29W400B-120N6R M29W400B-120N6TR M29W400B-120ZA1R M29W400B-120ZA1TR M29W400B-120ZA5R M29W400B-120ZA5TR M29W400B-120ZA6R M29W400B-120ZA6TR M29W400B-150M1R M29W400B-150M1TR M29W400B-150M5R M29W400B-150M5TR M29W400B-150M6R M29W400B-150M6TR M29W400B-150N1R M29W400B-150N1TR M29W400B-150N5R M29W400B-150N5TR M29W400B-150N6R M29W400B-150N6TR M29W400B-150ZA1R M29W400B-150ZA1TR M29W400B-150ZA5R M29W400B-150ZA5TR M29W400B-150ZA6R M29W400B-150ZA6TR M29W400B-90M1R M29W400B-90M1TR M29W400B-90M5R M29W400B-90M5TR M29W400B-90M6R M29W400B-90M6TR M29W400B-90N1R M29W400B-90N1TR M29W400B-90N5R M29W400B-90N5TR M29W400B-90N6R M29W400B-90N6TR M29W400B-90ZA1R M29W400B-90ZA1TR M29W400B-90ZA5R M29W400B-90ZA5TR M29W400B-90ZA6R M29W40
OCR Text	...d programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, November 1999 44 1 TSOP48 ...
Description	4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
File Size	243.63K / 34 Page	View it Online	Download Datasheet

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