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TOSHIBA
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| Part No. |
TPCA8083
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| OCR Text |
...in package (2) low drain-source on-resistance: r ds(on) = 2.6 m ? (typ.) (v gs = 10 v) (3) low leakage current: i dss = 10 a (max) (v ...time (rise time) switching time (turn-on time) switching time (fall time) switching time (turn-off t... |
| Description |
MOSFETs
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
234.24K /
9 Page |
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it Online |
Download Datasheet
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| Part No. |
K7A401800M-TC14
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| OCR Text |
... to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office nea...time t cyc 6.0 6.7 7.2 8.5 ns clock access time t cd 3.5 3.8 4.0 4.0 ns output enable access time t ... |
| Description |
256K X 18 CACHE SRAM, 4 ns, PQFP100
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| File Size |
404.62K /
15 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
AP2322GN
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| OCR Text |
on) 90m surface mount package i d 2.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i ...time 2 v ds =10v - 6 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =3.3 ? ... |
| Description |
Capable of 1.8V gate drive
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| File Size |
60.96K /
2 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
AP2322GN-HF
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| OCR Text |
on) 90m surface mount package i d 2.5a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i ...time 2 v ds =10v - 6 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =3.3 -16... |
| Description |
Advanced Power MOSFETs
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| File Size |
104.21K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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