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    FAIRCHILD[Fairchild Semiconductor]
Vishay Intertechnology, Inc.
Part No. USB10H
OCR Text ...especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have ...RESI STANCE V GS= -4.5V 10 8 6 -3.5V -3.0V 1.8 1.6 1.4 1.2 1 0.8 VGS = -2 .5 V -3.0V...
Description    Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET(双P沟道 PowerTrench MOS场效应管(漏电流-1.9A, 漏源电压-20V,导通电.17Ω 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

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    SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. VB024
OCR Text ...ied) Symbol V cl V ce(sat) I s(on) Vs I d(on) Vd I diag V inH V inL I inH V pos V neg V hys Ic (max) t off V diagH V diagL Parameter High V...resi stor represents vehicle wiring harness resistance 6/8 VB024 ISOWATT7 MECHANICAL DATA ...
Description HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

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    WEITRON[Weitron Technology]
Part No. WT6920AM STM6920A
OCR Text ...h dense cell design for low RDS(ON) RDS(ON)<35m@VGS = 10V RDS(ON)<62m@VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Pack...Resi st ance 1 0.5 0.2 0.1 PDM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0...
Description Surface Mount N-Channel Enhancement Mode MOSFET

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    2N7002W 2N7002W07

Pan Jit International Inc.
Part No. 2N7002W 2N7002W07
OCR Text ON), VGS@10V,IDS@500mA=5 * RDS(ON), VGS@4.5V,IDS@75mA=7.5 * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-R...Resi stance(PC B mounted)2 PD TJ , TS T G RJ A C O C /W Note: 1. Maximum DC current l...
Description 60V N-Channel Enhancement Mode MOSFET

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    BC548C BC548 BC546 BC546B BC547 BC548B BC547B BC548A BC547C BC547A BC546A

Pan Jit International Inc.
Part No. BC548C BC548 BC546 BC546B BC547 BC548B BC547B BC548A BC547C BC547A BC546A
OCR Text ...i nuous Max P ower D i ssi pati on S torage T mperature e Juncti on T mperature e VE B O I V mA mW O C P TOT TSTG TJ C C O THERMAL CHARACTERISTICS PARAMETER Thermal Resi stance, Juncti on to Ambi ent Symbol RJA Value ...
Description NPN GENERAL PURPOSE TRANSISTOR

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    SI4866BDY SI4866BDY-T1-E3 SI4866BDY-T1-GE3

Vishay Siliconix
Part No. SI4866BDY SI4866BDY-T1-E3 SI4866BDY-T1-GE3
OCR Text ...roduct summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 12 0.0053 at v gs = 4.5 v 21.5 29.5 nc 0.006 at v gs = 2.5 v 20.2 0.007...resi stance, and is more useful in settling the upper dissipation limit for cases where additional ...
Description N-Channel 12-V (D-S) MOSFET

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    SI4104DY-T1-E3

Vishay Siliconix
Part No. SI4104DY-T1-E3
OCR Text ...roduct summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 100 0.105 at v gs = 10 v 4.6 8.5 nc so-8 5 6 7 8 to p v ie w 2 3 4 1 sd...resi stance, and is more useful in settling the upper dissipation limit for cases where additional ...
Description N-Channel 100-V (D-S) MOSFET

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    SC1565 SC156505 SC1565IS-X.XTR SC1565IM-X.XTR SC1565IM-XXTRT SC1565I5MX.XTRT SC1565I5M-X.XTR SC1565I5T-X.X SC1565I5T-X.X

Semtech Corporation
Part No. SC1565 SC156505 SC1565IS-X.XTR SC1565IM-X.XTR SC1565IM-XXTRT SC1565I5MX.XTRT SC1565I5M-X.XTR SC1565I5T-X.X SC1565I5T-X.XT SC1565IS-X.XTRT SC1565IST-X.XTR SC1565IST-XXTRT SC1565IT-X.XT
OCR Text ..., it can be used to supply 2.5V on motherboards or 2.8V on peripheral cards from the 3.3V supply thus allowing the elimination of costly hea...resi stors. If external feedback resistors are used, the output voltage will be (See Application Cir...
Description Very Low Dropout 1.5 Amp Regulator With Enable

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    http://
SIRENZA[SIRENZA MICRODEVICES]
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. SBF-5089Z SBF-5089
OCR Text ...operation. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro...Resi stance (juncti on to lead) VS = 8 V RBIAS = 33 Ohms ID = 90 mA Typ. TL = 25C dB m dB dB dB ...
Description    DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
DC-500 MHz Cascadable InGaP/GaAs HBT MMIC Amplifier
DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier 直流500兆赫,级联的InGaP / GaAs HBT的MMIC放大

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    SBB-4089Z SBB-4089

Sirenza Microdevices
Part No. SBB-4089Z SBB-4089
OCR Text ...o 50 ohms. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro...Resi stance (juncti on to lead) VD = 5 V TL = 25C ID = 80 mA Typ. ZS = ZL = 50 Ohms w w w ...
Description Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier

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