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NXP SEMICONDUCTORS
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Part No. |
BZX84-A24212 BZX84-C15212 BZX84-C27212 BZX84-A3V6235 BZX84-A3V3235 BZX84-C62212 BZX84-B62212
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Description |
24 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 15 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 27 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 3.6 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 3.3 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 62 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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File Size |
236.56K /
7 Page |
View
it Online |
Download Datasheet |
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Pan Jit International Inc. Analog Devices, Inc. NXP Semiconductors N.V. Vishay Beyschlag Lattice Semiconductor, Corp. Pan Jit International I...
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Part No. |
BZT52-B62S BZT52-B75S BZT52-B75ST/R7 BZT52-B14ST/R13 BZT52-B20ST/R13 BZT52-B15ST/R13 BZT52-B24ST/R13 BZT52-B8V7ST/R7 BZT52-B3S BZT52-B3V3S BZT52-B3V6S BZT52-B3V9S BZT52-B75ST/R13 BZT52-B11S BZT52-B12S BZT52-B10S BZT52-B13S
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Description |
SURFACE MOUNT SILICON ZENER DIODES 75 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ROHS COMPLIANT, PLASTIC PACKAGE-2 14 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ROHS COMPLIANT, PLASTIC PACKAGE-2 20 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ROHS COMPLIANT, PLASTIC PACKAGE-2 15 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ROHS COMPLIANT, PLASTIC PACKAGE-2 24 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ROHS COMPLIANT, PLASTIC PACKAGE-2 8.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ROHS COMPLIANT, PLASTIC PACKAGE-2
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File Size |
61.15K /
4 Page |
View
it Online |
Download Datasheet |
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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it Online |
Download Datasheet |
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