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  n-substrate Datasheet PDF File

For n-substrate Found Datasheets File :: 10372    Search Time::3.016ms    
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    RB162L-60

Rohm
Part No. RB162L-60
OCR Text ...TERMINALS:Ct(pF) Tj=25C IF=1.0A n=20pcs Tj=25C VR=60V n=20pcs 200 190 180 170 160 150 AVE : 168.0pF 140 130 120 110 Tj=25C f=1MHz VR=0V n...substrate soldering land 2mm D=0.8 1.8 D.C. 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 half sin wave D=0.5 ...
Description Schottky Barrier Diode

File Size 411.50K  /  4 Page

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    Philips
Part No. BF998R BF998 BF998/T1
OCR Text N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Ph...substrate interconnected. The transistors are protected against excessive input voltage surges by in...
Description TRANSISTOR MOSFET
Silicon N-channel dual-gate

File Size 75.40K  /  12 Page

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    OKI[OKI electronic componets]
Part No. ML9042
OCR Text ...CUITS VDD VDD VDD P P N N Applied to pins T1, T2, and T3 Applied to pins RW/SI, RS1, and RS0/CSB Applied to pins E/SHT...substrate using COG technology, the chip tends to be susceptible to electrical characteristics of th...
Description DOT MATRIX LCD CONTROLLER DRIVER

File Size 545.14K  /  58 Page

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    VMMK-2503-TR1G VMMK-2503-BLKG

AVAGO TECHNOLOGIES LIMITED
Part No. VMMK-2503-TR1G VMMK-2503-BLKG
OCR Text ... 1 5 20 1 3579 11 1 3 f req u e n cy ( g hz) op 1 db ( dbm ) 0 5 1 0 1 5 20 1 3579 11 1 3 f req u e n cy ( g hz) s2 1 ( db ) 25 c 8 5 c -...substrate. calibration is achieved with a series of through, short and open substrates from which ...
Description 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package

File Size 170.25K  /  11 Page

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    LV5813TT LV5813TT-TE-L-H

Sanyo Semicon Device
ON Semiconductor
Part No. LV5813TT LV5813TT-TE-L-H
OCR Text ...o the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 7...substrate *2 0.85 w junction temperature tj max 150 c operating temperature topr -20 to ...
Description Step-down Switching Regulator

File Size 332.92K  /  9 Page

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    HMC-XTB11010

Hittite Microwave Corporation
http://
Part No. HMC-XTB11010
OCR Text ... input drive: +13 dbm passive: n o d c bias required die size: 1.1 x 1.4 x 0.1 mm frequ e ncy multipliers - pa ssi v e - c hip 2 2 - ...substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6...
Description GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT

File Size 178.61K  /  4 Page

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    UPA2757GR-E2-AT UPA2757GR-E1-AT UPA2757GR

NEC, Corp.
NEC Corp.
Part No. UPA2757GR-E2-AT UPA2757GR-E1-AT UPA2757GR
OCR Text N-CHANNEL POWER MOS FET DESCRIPTION The PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. 8 ...substrate of 2000 mm x 1.6 mmt <R> 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V 2 ...
Description MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开关N沟道功率场效应晶体管

File Size 169.45K  /  8 Page

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    RA30H4452M11

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RA30H4452M11
OCR Text ...t p o w e r p o u t ( w ) i n p u t v s w r i n 0 20 40 60 80 100 120 t o t a l e f f i c i e n c y t ( % ) p out @v ...substrate soldered onto a copper flange. for mechanical protection, a plastic cap is attached with s...
Description RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO

File Size 179.87K  /  8 Page

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