ms3112e22-32s pdf Datasheet P1 Description --- IC-ON-LINE


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ms3112e22-32s Datasheet PDF File

For ms3112e22-32s Found Datasheets File :: 22+ Page :: | <1> | 2 | 3 |

					NEC Corp.
Part No.	UPD6P4BMC-5A4
Description	ms3112e22-32s
File Size	184.44K / 32 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
File Size	304.91K / 20 Page	View it Online	Download Datasheet

					SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7
Description	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
File Size	4,046.09K / 64 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0
Description	(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片，32秒银行，32K/32ms参考，.5V (32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V
File Size	256.70K / 14 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD8AD KM418RD8C KM418RD32AC KM418RD8AC KM418RD8ACD-RG60 KM418RD8D KM418RD2D KM416RD8D KM416RD16AC KM416RD16AD KM416RD16C KM416RD16D KM416RD2AC KM416RD2AD KM416RD2C KM416RD2D KM416RD32AC KM416RD32AD KM416RD32C KM416RD32D KM416RD4AC KM416RD4AD KM416RD4C KM416RD4D KM416RD8AC_D-RK70 KM416RD8AC_D-RK80 KM416RD8AC_DB-RCG60 KM416RD8AD KM416RD8C KM416RD8ACD-RK80 KM416RD8ACDB-RCG60 KM416RD8ACD-RK70 KM416RD8AC-RK70 KM416RD8AD-RK70 KM418RD8AC-RK70 KM418RD8AD-RK70 KM418RD8AC-RK80 KM418RD16AD
Description	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
File Size	4,041.48K / 64 Page	View it Online	Download Datasheet

					http:// SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R271669B-NMCG6 K4R441869B-NMCG6 K4R441869B-NMCK7 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R441869B-NCK7 K4R441869B-NCK8
Description	256K x 16/18 bit x 32s banks Direct RDRAMTM
File Size	309.32K / 20 Page	View it Online	Download Datasheet

					Electronics Industry Public Company Limited EIC[EIC discrete Semiconductors]
Part No.	A2W005G A2W10G A2W04G A2W06G A2W08G A2W02G A2W01G
Description	AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS 雪崩玻璃钝化桥式整流 KPT05E18-32S
File Size	17.42K / 2 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
Description	576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
File Size	310.66K / 20 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R761869A-FBCCN1 K4R761869A-GCN1 K4R761869A-GCT9 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-FCM8
Description	576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
File Size	314.62K / 20 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4R271669B-NCK8 K4R271669B-NCG6 K4R271669B-MCG6 K4R441869B-MCK8 K4R441869B-MCK7 K4R441869B-MCG6 K4R441869B-NCG6
Description	256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM
File Size	314.70K / 20 Page	View it Online	Download Datasheet

For ms3112e22-32s Found Datasheets File :: 22+ Page :: | <1> | 2 | 3 |

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