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  ms-026 Datasheet PDF File

For ms-026 Found Datasheets File :: 2510    Search Time::1.203ms    
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    ALSC
Part No. ASM3P2759A
OCR Text ...it V V NA NA mA mA V V uA mA V mS Q XOUT output low current (@0.4V, VDD=3.3V) XOUT output high current (@2.5V, VDD=3.3V) Output low volt...026 BSC 0.252 BSC 0.028 8 0.50 0 Inches Max 0.043 0.006 0.037 0.012 0.008 0.122 0.177 0.05 0.85 ...
Description The el-EMI-nator? Series for Low-Power

File Size 154.91K  /  11 Page

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    BYW81P BYW81P200 BYW81P-200 BYW81PI BYW81PI200 BYW81PI-200 BYW81

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STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
ST Microelectronics
Part No. BYW81P BYW81P200 BYW81P-200 BYW81PI BYW81PI200 BYW81PI-200 BYW81
OCR Text ...A mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % To evaluate the conduction losses use the following ...026 0.106 0.220 0.270 0.157 0.118 0.069 F A a1 l2 a2 b1 c1 e c2 Marking : Type num...
Description    HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
Coaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:FEP; Capacitance:16.1pF/ft; Conductor Material:Copper; Leaded Process Compatible:Yes RoHS Compliant: Yes
; Number of Conductors:2; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:FEP; Capacitance:55pF/ft; Conductor Material:Copper; Outer Diameter:0.131" RoHS Compliant: Yes 高效快速恢复整流二极管

File Size 66.25K  /  6 Page

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    D16-4148 D16-4150

MICROSEMI[Microsemi Corporation]
Part No. D16-4148 D16-4150
OCR Text ...ard Surge Current: 2.0Amps (8.3 mS) Peak Reverse voltage VRM: D16-4148/100V, D16-4150/75V Steady state reverse voltage VR: D16-4148/75V, D16-4150/50V Continuous forward current IF: 400mA Power dissipation (PD): 500mW Derating factor: 4.0 mW...
Description    Switching Diode Array

File Size 65.29K  /  1 Page

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    DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48
OCR Text ...t, dIF/dt - (A/s) 100 0 1 ms 10 1 23 5 10 20 0.8 50 Fig.4 Total stored charge Cycles at 50Hz Duration Fi...026 0.027 Single side 0.038 0.040 0.042 0.043 d.c. Halfwave 3 phase 120 6 phase 60 0.001 0.001...
Description Rectifier Diode 1428 A, 4400 V, SILICON, RECTIFIER DIODE
Rectifier Diode 1428 A, 4600 V, SILICON, RECTIFIER DIODE
Rectifier Diode 1428 A, 4300 V, SILICON, RECTIFIER DIODE

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    HUF75307T3ST HUF75307T3 HUF75307T3STNL

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75307T3ST HUF75307T3 HUF75307T3STNL
OCR Text ...0 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TA = 25oC 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITC...
Description 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET PowerMOSFET
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
2.6A 55V 0.090 Ohm N-Channel UltraFET Power MOSFET

File Size 170.83K  /  9 Page

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    HUF75309T3ST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75309T3ST
OCR Text ... 10 100 tAV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 25 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PUL...
Description 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 181.08K  /  9 Page

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    HUF76639S3S HUF76639P3

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76639S3S HUF76639P3
OCR Text ... (V) tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 100 PULSE DURATION = 80s DUTY CYCLE = 0.5%...
Description 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
50A 100V 0.027 Ohm N-Channel Logic Level UltraFET Power MOSFET

File Size 215.69K  /  10 Page

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    HUFA75307T3ST

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA75307T3ST
OCR Text ...0 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TA = 25oC 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITC...
Description 2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
2.6A 55V 0.090 Ohm N-Channel UltraFET Power MOSFET

File Size 171.35K  /  9 Page

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    HUFA75309T3ST

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA75309T3ST
OCR Text ... 10 100 tAV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 25 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PUL...
Description 3A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFET
3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET

File Size 172.71K  /  8 Page

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    IXGH32N60BD1 IXGT32N60BD1

IXYS[IXYS Corporation]
Part No. IXGH32N60BD1 IXGT32N60BD1
OCR Text ...t TC = 25C TC = 90C TC = 25C, 1 ms VGE= 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 600 600 20 ...026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .16...
Description HiPerFAST IGBTwith Diode

File Size 68.62K  /  2 Page

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