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Motorola
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| Part No. |
mrfg35010
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| OCR Text |
mrfg35010 motorola rf device data the rf gaas line rf power field effect transistor designed for wll/mmds or umts driver applications with frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ab or cl... |
| Description |
mrfg35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT
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| File Size |
398.06K /
12 Page |
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MOTOROLA
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| Part No. |
mrfg35010
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| OCR Text |
mrfg35010 Rev. 8, 6/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class... |
| Description |
.5 GHz, 10 W, 12 V Power FET GaAs PHEMT
|
| File Size |
361.28K /
12 Page |
View
it Online |
Download Datasheet |
|
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