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  mmt Datasheet PDF File

For mmt Found Datasheets File :: 216    Search Time::1.469ms    
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    RN2107MFV RN2108MFV RN2109MFV

Toshiba Semiconductor
Part No. RN2107MFV RN2108MFV RN2109MFV
OCR Text ... board (25.4 mm x 25.4 mm x 1.6 mmt) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 1 2005-03-30 RN2107MFVRN2109MFV Electrical Characteristics (Ta = 25C) Characteristic Collector cutoff current RN2107MFV~ 2109MFV RN2107MFV Emitter cutoff cur...
Description Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

File Size 197.03K  /  6 Page

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    2SC6026

Toshiba Semiconductor
Part No. 2SC6026
OCR Text ...on FR4 board (10 mm x 10 mm x 1 mmt) BASE CURRENT IB (A) 100 Ta = 100C 10 25 -25 1 COMMON EMITTER VCE = 6V 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 60 80 100 120 140 160 BASE-EMITTER VOLTAGE VBE (V) AMBIENT ...
Description Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications

File Size 128.52K  /  3 Page

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    TA76L431FT TA76L431S

Toshiba Semiconductor
Part No. TA76L431FT TA76L431S
OCR Text ...e mounting: 30 mm x 30 mm x 0.8 mmt (Cu pad area 35 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decre...
Description 2.49-V Adjustable High-Precision Shunt Regulators

File Size 246.40K  /  9 Page

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    TA76L431FB

Toshiba Semiconductor
Part No. TA76L431FB
OCR Text ...e mounting: 30 mm x 30 mm x 0.8 mmt (Cu pad area 35 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decre...
Description 2.495 V Adjustable High-Precision Shunt Regulators

File Size 195.71K  /  8 Page

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    TA76432AF TA76432AFR TA76432AFT TA76432AS

Toshiba Semiconductor
Part No. TA76432AF TA76432AFR TA76432AFT TA76432AS
OCR Text ...d mounting: 30 mm x 30 mm x 0.8 mmt (Cu pad area 35 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decre...
Description TWO TERM VOLTAGE REFERENCE, PSSO5
1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.26 V, PSSO3
1.26-V Adjustable High-Precision Shunt Regulators

File Size 250.83K  /  11 Page

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    NP180N04TUJ NP180N04TUJ-E1-AY NP180N04TUJ-E2-AY NP180N04TUJ-15

Renesas Electronics Corporation
Part No. NP180N04TUJ NP180N04TUJ-E1-AY NP180N04TUJ-E2-AY NP180N04TUJ-15
OCR Text ...bs trate of 40 mm x 40 mm x 0.8 mmt ? 3. t ch(peak) 150 c, r g = 25 r07ds0180ej0100 rev.1.00 dec 17, 2010 np180n04tuj chapter title r07ds0180ej0100 rev.1.00 page 2 of 6 dec 17, 2010 electrical characteristics (t a...
Description MOS FIELD EFFECT TRANSISTOR

File Size 209.61K  /  8 Page

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    HN1A26FS

Toshiba Semiconductor
Part No. HN1A26FS
OCR Text ...on FR4 board (10 mm x 10 mm x 1 mmt) BASE CURRENT IB (uA) -100 Ta = 100C -10 -25 25 -1 COMMON EMITTER VCE = -6V -0.1 0 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 BASE-EMITTER VOLTAGE VBE (V) 80 100 120 140 160 180 AMBIENT TEMP...
Description Silicon PNP Epitaxial Type (PCT Process) Frequency General-Purpose Amplifier Applications

File Size 140.01K  /  3 Page

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    Vishay Intertechnology, Inc.
Part No. UPA2210T1M-T2-AT
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circui t is externally required...
Description 7.2 A, 20 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, 1629, VSOF-8

File Size 263.67K  /  8 Page

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    DF3A8.2LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFV
OCR Text ... board (25.4 mm x 25.4 mm x 1.6 mmt) 0.5mm 0.45mm 0.45mm 0.4mm JEDEC JEITA TOSHIBA 1-1Q1B Weight: 0.0015 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Zener voltage Dynamic impedance Reverse current Terminal ...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 126.44K  /  3 Page

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    Vishay Intertechnology, Inc.
Part No. UPA2550T1H-T1-AT
OCR Text ...ard of 25. 4 mm x 25.4 mm x 0.8 mmt equivalent circuit (1/2) source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when ...
Description 5 A, 12 V, 0.093 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, VSOF, 8 PIN

File Size 259.54K  /  9 Page

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