| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C BuS EEPROM
45 V, 100 mA NPN general-purpoSe tranSiStorS
General purpoSe PIN diode
12-Bit, 2.5 uS Dual DAC, Serial Input, Pgrmable Settling Time, SimultaneouS Update, Low Power 8-CDIP -55 to 125
8-Bit ConStant-Current LED Sink Driver 16-TSSOP -40 to 125
Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: YeS
CRIMP SET 0.14 - 0.50MM ;
NPN 1 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; f<Sub>TSub>: 1 GHz; Frequency: 4.5 MHz; I<Sub>CSub>: 25 mA; NoiSe figure: 4.5@f1 dB; P<Sub>totSub>: 300 mW; Polarity: NPN ; VCEO max: 15 V
16-Channel LED Driver 100-HTQFP -20 to 85
8-Bit ConStant-Current LED Sink Driver 16-SOIC -40 to 125
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-SOIC -40 to 85
MicroproceSSor CryStal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-PDIP -40 to 85
ER 4C 4#4 PIN RECP WALL
8-Bit, 10 uS Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 16-SOIC 0 to 70
Power LDMOS tranSiStor
Three quadrant triacS guaranteed commutation - I<Sub>GTSub>: 25 mA; I<Sub>TSub> (R<Sub>MSSub>): 16 A; V<Sub>DRMSub>: 600 V
18-Bit RegiStered TranSceiver With 3-State OutputS 56-SSOP -40 to 85
45 V, 500 mA PNP general purpoSe tranSiStorS - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I<Sub>CSub> max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 4C 4#4 SKT RECP WALL
Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75
8-Bit, 10 uS Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 16-SOIC -40 to 85
NPN 1 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; NoiSe figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V
ER 23C 16 12 8 4 PIN RECP WALL
D87 - CONNECTOR ACCESSORY
ER 5C 3#12 2#0 SKT RECP WALL
Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V
Triple high-Speed Switching diodeS - Cd max.: 1.5 pF; Configuration: triple iSolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 100 V
NPN 5 GHz wideband tranSiStor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; NoiSe figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; SyStem frequency: 9
P-channel enhancement mode vertical D-MOS tranSiStor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V
Removal Tool Han E CrimpcontactS in E Mo; RoHS Compliant:N/A
PNP 5 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; V<Sub
Three quadrant triacS guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V
PowerMOS tranSiStor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; Number of pinS: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V
Silicon RF SwitcheS - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V
Schottky barrier double diodeS - Cd max.: 60@VR=4V pF; Configuration: dual SerieS ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-Speed double diode - Cd max.: 2.5 pF; Configuration: dual iSolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 nS; VFmax: 1@IF=200mA mV; VR max: 60 V
Schottky barrier double diodeS - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-Speed diode - Cd max.: 1 pF; Configuration: Single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 75 V
NPN general purpoSe double tranSiStor - DeScription: Current Mirror
ER 30C 24#16 6#12 SKT RECP WAL
45 V, 500 mA PNP general purpoSe tranSiStorS - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 35C 28#16 7#12 SKT RECP WAL
ER 35C 28#16 7#12 PIN RECP WAL
Dual high-voltage Switching diodeS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
PowerMOS tranSiStor TOPFET high Side Switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
CONNECTOR ACCESSORY 连接器附
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
Replaced by TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
TOPFET high Side Switch SMD verSion 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
For USe With:Harting Han D ContactS; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded ProceSS Compatible:YeS 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
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