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low power high density central Datasheet PDF File

For low power high density central Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				List of Unclassifed Man...
Part No.	DR127-100-R DR127-150-R DR127-101-R DR127-102-R DR127-1R5-R DR127-220-R DR127-2R2 DR127-2R2-R DR127-330-R DR127-331-R DR127-3R3-R DR127-470-R
Description	high power density, high efficiency, shielded inductors
File Size	1,345.67K / 11 Page	View it Online	Download Datasheet

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor] Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
Part No.	ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI2096E-135LQ128 ISPLSI2096E-135LT128 ISPLSI2096E-180LQ128 ISPLSI2096E-180LT128 2096E
Description	In-SystemProgrammableSuperFASThighdensityPLD In-System Programmable SuperFAST?/a> high density PLD In-System Programmable SuperFAST high density PLD In-System Programmable SuperFAST⑩ high density PLD In-System Programmable SuperFASThigh density PLD EE PLD, 10 ns, PQFP128 In-System Programmable SuperFAST??high density PLD
File Size	139.44K / 11 Page	View it Online	Download Datasheet

				XP power Limited
Part No.	SDC320AD1224
Description	high power density
File Size	401.99K / 4 Page	View it Online	Download Datasheet

				Cooper Electronic
Part No.	SD20-XXX
Description	high power density
File Size	407.16K / 8 Page	View it Online	Download Datasheet

				Ohmite Mfg. Co.
Part No.	ARF150
Description	high power density
File Size	127.03K / 2 Page	View it Online	Download Datasheet

				Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
Part No.	1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/883 ISPLSI1024/883 ISPLSI1024-60LH/883 ISPLS1024-60LH883
Description	60 MHz in-system prommable high density PLD In-System Programmable high density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
File Size	143.95K / 12 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor] LATTICE [Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
Part No.	ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-100LT128 ISPLSI2096VL-135LT128 ISPLSI2096VL-165LT128 2096VL
Description	2.5VIn-SystemProgrammableSuperFASThighdensityPLD 2.5V In-System Programmable SuperFAST⑩ high density PLD 2.5V In-System Programmable SuperFAST high density PLD 2.5V In-System Programmable SuperFASThigh density PLD EE PLD, 8 ns, PQFP128 2.5V In-System Programmable SuperFASThigh density PLD EE PLD, 10 ns, PQFP44
File Size	139.51K / 11 Page	View it Online	Download Datasheet

				Zilog, Inc.
Part No.	Z84C0006PEG Z84C0006VEG Z84C0008AEG Z84C0008PEG Z84C0008VEC Z84C0010FEC Z84C0010PEC Z84C0010PEG Z8400 Z84C0008VEG Z84C0010AEG
Description	central PROCESSING UNIT The extensive instruction set contains 158 instructions, instructions,including the 8080A instruction set as a subest Z8400/Z84C00 NMOS/CMOS Z80 CPU central processing Unit central Processing Unit
File Size	1,112.25K / 36 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMicroelectronics
Part No.	M29W640D M29DW323
Description	Excalibur high-Speed low-power Precision Quad Operational Amplifier 16-SOIC FLASH NOR high density & CONSUMER
File Size	1,807.30K / 15 Page	View it Online	Download Datasheet

For low power high density central Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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