K6R1004V1D-JI08 pdf Datasheet P1 Part Num --- IC-ON-LINE


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K6R1004V1D-JI08 Datasheet PDF File

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					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6R1004C1D-KC10 K6R1004C1D-KI10 K6R1004V1D K6R1004V1D-JC08 K6R1004V1D-JC08_10 K6R1004V1D-JC10 K6R1004V1D-JI08 K6R1004V1D-JI08_10 K6R1004V1D-JI10 K6R1004V1D-KC08 K6R1004V1D-KC08_10 K6R1004V1D-KI08 K6R1004V1D-KI08_10 K6R1004V1D-KI10 K6R1008C1D-JC10 K6R1008C1D-JI10 K6R1008C1D-KC10 K6R1008C1D-KI10 K6R1008C1D-TC10 K6R1008C1D-UC10 K6R1008C1D-UI10 K6R1008V1D-JC08 K6R1008V1D-JC08_10 K6R1008V1D-JC10 K6R1008V1D-JI08 K6R1008V1D-JI08_10 K6R1008V1D-JI10 K6R1008V1D-KC08 K6R1008V1D-KC08_10 K6R1008V1D-KC10 K6R1008V1D-KI08 K6R1008V1D-KI08_10 K6R1008V1D-KI10 K6R1008V1D-TC08 K6R1008V1D-TC08_10 K6R1008V1D-TC10 K6R1008V1D-TI08 K6R1008V1D-TI08_10 K6R1008V1D-TI10 K6R1008V1D-UC08 K6R1008V1D-UC08_10 K6R1008V1D-UC10 K6R1008V1D-UI08 K6R1008V1D-UI08_10 K6R1008V1D-UI10 K6R1016C1D-EC10 K6R1016C1D-EI10 K6R1016C1D-JC10 K6R1016C1D-JI10 K6R1016C1D-KC10 K6R1016C1D-KI10 K6R1016C1D-TC10 K6R1016C1D-TI10 K6R1016C1D-UC10 K6R1016C1D-UI10 K6R1016V1D-EC08 K6R1016V1D-EC08_10 K6R1016V1D-EC10 K6R1016V1D-EI08 K6R1016V1D-EI08_10 K6R1016V1D-EI10 K6R1016V1D-JC08 K6R1016V1D-JC08_10 K6R1016V1D-JC10 K6R1016V1D-JI08 K6R1016V1D-JI08_10 K6R1016V1D-JI10 K6R1016V1D-KC08 K6R1016V1D-KC08_10 K6
Description	256K X 4 STANDARD SRAM, 10 ns, PDSO32 256K X 4 STANDARD SRAM, 8 ns, PDSO32 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作 TV 23C 21#20 2#16 SKT PLUG REC 64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges TV 55C 55#22D SKT PLUG RECP
File Size	189.78K / 9 Page	View it Online	Download Datasheet

HUA FENG CIRCUIT

					Samsung Electronic
Part No.	K6R1004V1D
Description	256K x 4 Bit (with /OE) High-Speed CMOS Static RAM(3.3V Operating) Row Select Data Sheet
File Size	130.84K / 9 Page	View it Online	Download Datasheet

					samsung
Part No.	K6R1016V1D K6R1016V1D-JI080 K6R1016V1D-UI080
Description	64K X 16 STANDARD SRAM, 8 ns, PDSO44 IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
File Size	298.89K / 11 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6R1008V1D-TC10 K6R1008V1D-JC08 K6R1016C1D-TC10 K6R1008C1D-JC10 K6R1016C1D-JC10 K6R1004C1D-JC10 K6R1008C1D-TI10 K6R1016C1D-EC10 K6R1016C1D-EI10 K6R1016C1D-JI10 K6R1016C1D-KC10 K6R1016C1D-KI10 K6R1016C1D-TI10 K6R1016C1D-UC10 K6R1016C1D-UI10 K6R1016V1D-UI10 K6R1004C1D K6R1004C1D-JI10 K6R1004C1D-KC10 K6R1004C1D-KI10 K6R1004V1D-JC08 K6R1004V1D-JC10 K6R1004V1D-JI08 K6R1004V1D-JI10 K6R1004V1D-KC10 K6R1004V1D-KI08 K6R1004V1D-KI10 K6R1008C1D-JI10 K6R1008C1D-KC10 K6R1008C1D-KI10 K6R1008C1D-UC10 K6R1008C1D-UI10 K6R1008V1D-JC10 K6R1008V1D-JI08 K6R1008V1D-JI10 K6R1008V1D-KC08 K6R1008V1D-KC10 K6R1008V1D-KI08 K6R1008V1D-KI10 K6R1008V1D-TC08 K6R1008V1D-TI08 K6R1008V1D-TI10 K6R1008V1D-UC08 K6R1008V1D-UC10 K6R1008V1D-UI08 K6R1008V1D-UI10 K6R1016V1D-EC08 K6R1016V1D-EC10 K6R1016V1D-EI08 K6R1016V1D-EI10 K6R1016V1D-JC08 K6R1016V1D-JI08 K6R1016V1D-JI10 K6R1016V1D-KC08 K6R1016V1D-KC10 K6R1016V1D-KI08 K6R1016V1D-KI10 K6R1016V1D-TC08 K6R1016V1D-TC10 K6R1016V1D-TI08 K6R1016V1D-TI10 K6R1016V1D-UC08 K6R1016V1D-UC10 K6R1016V1D-UI08 K6R1004C1D-KC100
Description	256K X 4 STANDARD SRAM, 10 ns, PDSO32 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作） 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
File Size	184.40K / 9 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016V1D-TC10 K6R1004C1D-JCI1012 K6R1004V1D-JCI0810 K6R1008C1D-JTCI1012
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作 64K X 16 STANDARD SRAM, 10 ns, PDSO44
File Size	258.35K / 11 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTCI12 K6R1008V1D K6R1008V1D-JTCI08 K6R1008V1D-JTCI10 K6R1008V1D-J_TC_I10 K6R1004C1D-JC_I10 K6R1004C1D-JC_I12 K6R1004V1D-JC_I08 K6R1004V1D-JC_I10 K6R1008C1D-J_TC_I10 K6R1008C1D-J_TC_I12 K6R1008V1D-J_TC_I08 K6R1016V1D-JTICI08_10 K6R1016C1D-JTCI10_12 K6R1016C1D-JECII10_12 K6R1004V1D-JCI08_10 K6R1008V1D-JTCI08_10 K6R1016V1D-JECI08_10 K6R1008C1D-JTCI10_12
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
File Size	181.71K / 10 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6R4008V1D-JC08 K6R4008V1D-JC10 K6R4008V1D-JI08 K6R4008V1D-JI10 K6R4008V1D-KC08 K6R4008V1D-KC10 K6R4008V1D-KI08 K6R4008V1D-KI10 K6R4008V1D-TC08 K6R4008V1D-TC10 K6R4008C1D-JC10 K6R4016C1D-EC10 K6R4016C1D-EC8 K6R4016C1D-EI10 K6R4016C1D-EI8 K6R4016C1D-EL10 K6R4016C1D-EL8 K6R4016C1D-EP10 K6R4016C1D-EP8 K6R4016C1D-JC8 K6R4016C1D-JI10 K6R4016C1D-JI8 K6R4016C1D-JL10 K6R4016C1D-JL8 K6R4016C1D-JP10 K6R4016C1D-UP8 K6R4004C1D-JC10 K6R4004C1D-JI10 K6R4004C1D-KC10 K6R4004C1D-KI10 K6R4004V1D-JC08 K6R4004V1D-JC10 K6R4004V1D-JI08 K6R4004V1D-JI10 K6R4004V1D-KC08 K6R4004V1D-KC10 K6R4004V1D-KI08 K6R4004V1D-KI10 K6R4008C1D-JI10 K6R4008C1D-KC10 K6R4008C1D-KI10 K6R4008C1D-TC10 K6R4008C1D-TI10 K6R4008C1D-UC10 K6R4008C1D-UI10 K6R4008V1D-TI08 K6R4008V1D-UC08 K6R4008V1D-UC10 K6R4008V1D-UI08 K6R4016C1D K6R4016C1D-JP8 K6R4016C1D-KC10 K6R4016C1D-KC8 K6R4016C1D-KI10 K6R4016C1D-KI8 K6R4016C1D-KL10 K6R4016C1D-KL8 K6R4016C1D-KP10 K6R4016C1D-KP8 K6R4016C1D-TC10 K6R4016C1D-TC8 K6R4016C1D-TI10 K6R4016C1D-TI8 K6R4016C1D-TL10 K6R4016C1D-TL8 K6R4016C1D-TP10 K6R4016C1D-TP8 K6R4016C1D-UC10 K6R4016C1D-UC8 K6R4016C1D-UI10 K6R4016C1D-UI8 K6R4016C1D-UL10 K6R4016C1D-UL8 K6R4016C1
Description	256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静态RAM.0V操作）。在经营商业和工业温度范围 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静RAM.0V操作）。在经营商业和工业温度范围 CAP,ELECTRO,1000UF,25V DIODE,RECT,1A 400V SMD MELF PCB Relay; Contacts:SPDT; Coil Voltage AC Max:120V; Contact Carry Current:30A; Coil Resistance:3000ohm; Mounting Type:PCB; Relay Terminals:Quick Connect; Relay Mounting:PC Board; Contact Rating:30A; Switch Function:SPDT Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x20 mm; Packaging: Bulk
File Size	138.58K / 12 Page	View it Online	Download Datasheet

					Samsung semiconductor
Part No.	K6R4016C1D-TL0810 K6R4008C1D-TI10 K6R4016C1D-EC0810 K6R4016C1D-EC10 K6R4016C1D-EI0810 K6R4016C1D-EI10 K6R4016C1D-EL0810 K6R4016C1D-EP0810 K6R4016C1D-TP0810 K6R4016C1D-UL0810 K6R4016C1D-UP0810 K6R4016C1D-JC0810 K6R4008C1D-JC0810 K6R4004C1D-JC0810 K6R4008C1D-UI0810 K6R4016C1D-UI0810 K6R4008C1D-TI0810 K6R4016C1D-TI0810 K6R4016C1D-TI10 K6R4016C1D-KP0810 K6R4016C1D-JP0810 K6R4016C1D-TC0810 K6R4008C1D-TC0810 K6R4008C1D-KI0810 K6R4016C1D-KI0810 K6R4016C1D-JL0810 K6R4016C1D-KL0810 K6R4004C1D-KC0810 K6R4008C1D-KC0810 K6R4016C1D-KC0810 K6R4008C1D-JI0810 K6R4016C1D-JI0810 K6R4008C1D-UC0810 K6R4016C1D-UC0810 K6R4008C1D-UC10 K6R4016C1D-UC10 K6R4008C1D-TC10 K6R4016C1D-TC10 K6R4008C1D-UI10 K6R4016C1D-UI10 K6R4004C1D-JI10 K6R4008C1D-JI10 K6R4016C1D-JI10 K6R4004C1D-KI10 K6R4008C1D-KI10 K6R4008C1D-JC10 K6R4004C1D-KI100810 K6R4004C1D-KC10 K6R4004C1D-JC10 K6R4004C1D-JI100810 K6R4016C1D-KC10 K6R4016C1D-JC10 K6R4016C1D-KI10
Description	1Mx4 Bit High Speed Static RAM(5.0V Operating)
File Size	216.69K / 9 Page	View it Online	Download Datasheet

					Stackpole Electronics, Inc. Ecliptek, Corp. Analog Devices, Inc. Glenair, Inc.
Part No.	AM3064-70/BZC AM3064-50GI175 AM3064-50JC068 AM3090-50/BZC AM3020-50/BZC AM3030-50/BZC AM3042-50/BZC AM3064-50/BZC AM3064-50GC068 AM3064-70GC068 AM3064-100GI068 AM3064-50GI068 AM3064-100GC068 AM3064-100JC068 AM3064-50JI068 AM3064-100JI068 AM3064-70GI068 AM3042-70GC084 AM3042-100GC084 AM3042-50GC084 AM3064-70JI068 AM3064-70JC068 AM3090-100GC175 AM3090-70GC175 AM3090-70/BZC AM3090-50GC175 AM3020-100GI084 AM3090-50GI175 AM3064-70GC175 AM3020-70JI084 AM3064-100GI175 AM3020-70JC084 AM3090-100GI175 AM3020-70JC068 AM3020-70JI068 AM3020-70GC084 AM3020-70GI084 AM3020-70/BZC AM3064-100GC175 AM3064-50GC175 AM3064-70GI175 AM3064-70GC084 AM3064-50GC084 AM3064-100GC084 AM3020-50JI068 AM3020-100JI068 AM3020-50JC068 AM3020-100JC068 AM3020-100GC084 AM3030-70GI084 AM3030-50GC084 AM3020-100JI084 AM3042-100JI084 AM3030-70JI084 AM3030-70JC084 AM3020-50JC084
Description	10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH) 10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH) DIE SALE, 2.7V, 7 MIL(BIOS FLASH) 10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH) 8-SOIC,AUTO TEMP,2.7V(SERIAL EE) 10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE) 10MS, 8 PDIP, EXT TEMP, GREEN,2.7V(SERIAL EE) 10MS, 8 TSSOP, INT TEMP, GREEN, 1.8V(SERIAL EE) 10MS, 8 PDIP, INT TEMP, GREEN, 2.7V(SERIAL EE) 10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE) 10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE) 10MS, 8 PDIP, IND TEMP, GREEN,2.7V(SERIAL EE) 8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列（FPGA 10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA 10MS, 8 SOIC, INT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA 10MS, 8 PDIP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
File Size	638.86K / 16 Page	View it Online	Download Datasheet

					Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R1016C1D-JTCI10/12 K6R1008C1D-JTCI10/12 K6R1008V1D-JTCI08/10 K6R1004C1D-JCI10/12 K6R1004V1D-JCI08/10 K6R1016V1D-JECI08/10 K6R1008V1D-JTCI08 K6R1008C1D-JTCI12 K6R1008V1D-JTCI10 K6R1008C1D-JTCI10 K6R1004C1D-JCI12 K6R1004C1D-JCI10 K6R1004V1D-JCI10 K6R1004V1D-JCI08
Description	64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的） 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
File Size	176.15K / 9 Page	View it Online	Download Datasheet

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