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  irhn7c50se Datasheet PDF File

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    IRHN7C50SE IRHN2C50SE IRHN2C50SE-15

International Rectifier
Part No. irhn7c50se IRHN2C50SE IRHN2C50SE-15
OCR Text irhn7c50se features: n radiation hardened up to 1 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical...
Description Simple Drive Requirements
600V 50kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package
600V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package

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    IRHN7C50SE

International Rectifier
Part No. irhn7c50se
OCR Text irhn7c50se features: n radiation hardened up to 1 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical...
Description (IRHN2C50SE / irhn7c50se) TRANSISTOR N-CHANNEL

File Size 208.82K  /  4 Page

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    IRF[International Rectifier]
Part No. irhn7c50se IRHN2C50SE
OCR Text ...FET(R) TRANSISTOR IRHN2C50SE irhn7c50se N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600 Volt, 0.60, (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Ad...
Description TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

File Size 80.62K  /  4 Page

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    IRHN2C50SE

International Rectifier
Part No. IRHN2C50SE
OCR Text irhn7c50se features: n radiation hardened up to 1 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical...
Description (IRHN2C50SE / irhn7c50se) TRANSISTOR N-CHANNEL

File Size 208.82K  /  4 Page

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