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Kersemi Electronic Co., Ltd...
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| Part No. |
irf540n
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| OCR Text |
irf540n power mosfet parameter typ. max. units r jc junction-to-case ??? 1.15 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance v dss = 100v r ds(on) = 44m ? i d = 33a s d g to-2... |
| Description |
Advanced Process Technology
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| File Size |
707.89K /
8 Page |
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Inchange Semiconductor ...
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| Part No. |
irf540n
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| OCR Text |
i n c h a n g e s e m i c o n d u c t o r i s c p r o d u c t s p e c i f i c a t i o n i s c w e b s i t e w w w . i s c s e m i . c o m i s c & i s c s e m i i s r e g i s t e r e d t r a d e m a r k 1 i s c n - c h a n n e l m o s f e ... |
| Description |
N-Channel Mosfet Transistor
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| File Size |
231.98K /
2 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRFI540N
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| OCR Text |
...cycle 2%. t=60s, =60Hz
Uses irf540n data and test conditions
VDD = 25V, starting TJ = 25C, L = 2.0mH
RG = 25, IAS = 16A. (See Figure 12)
ISD 16A, di/dt 210A/s, VDD V(BR)DSS,
TJ 175C
IRFI540N
1000
VGS 15V 10V 8.0V 7.0V... |
| Description |
Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.052ohm，身份证\u003d 20A条）
Power MOSFET(Vdss=100V/ Rds(on)=0.052ohm/ Id=20A)
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| File Size |
127.71K /
8 Page |
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it Online |
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Kersemi Electronic Co., Ltd...
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| Part No. |
irf540nS
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| OCR Text |
...mited to t j = 175 c . uses irf540n data and test conditions. **when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 parameter min. typ. max. units ... |
| Description |
Ultra Low On-Resistance
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| File Size |
1,055.93K /
10 Page |
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it Online |
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