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  intermodulation Datasheet PDF File

For intermodulation Found Datasheets File :: 7596    Search Time::2.125ms    
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    TA0102A

ETC
Tripath Technology Inc.
Electronic Theatre Controls, Inc.
Part No. TA0102A
OCR Text ...monic Distortion Plus Noise IHF intermodulation Distortion Signal-to-Noise Ratio Channel Separation Pow er Supply Rejection Ratio Pow er Efficiency Output Noise Voltage 19kHz, 20kHz, 1:1 (IHF), RL = 4 POUT = 30W/Channel A-Weighted, POUT ...
Description STEREO 150W (4 Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER
STEREO 150W (4蟹) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPPTM) TECHNOLOGY
STEREO 150W (4з) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPPTM) TECHNOLOGY
STEREO 150W (4? CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPPTM) TECHNOLOGY

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    Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF19125 MRF19125S MRF19125SR3
OCR Text ...f1 = 1987.5 MHz, f2 = 1990 MHz) intermodulation Distortion (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 M...
Description RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

File Size 359.33K  /  12 Page

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    BLW83

NXP Semiconductors
Philips Semiconductors
Part No. BLW83
OCR Text ... BLW83 typ. 24 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. hand...
Description HF/VHF power transistor

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    MRF19090 MRF19090S MRF19090SR3

Motorola, Inc
Part No. MRF19090 MRF19090S MRF19090SR3
OCR Text ...ne Spacing = 100 kHz) 3rd Order intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 199...
Description MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

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    MRF20030

Motorola, Inc
Part No. MRF20030
OCR Text ...ain -- 9.8 dB Efficiency -- 34% intermodulation Distortion -- -28 dBc * Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power -- 30 Watts Power Gain -- 10.5 dB Efficiency -- 40% * Excellent Thermal Stability * Capable of Han...
Description RF POWER TRANSISTOR

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    MRF21030D MRF21030R3 MRF21030SR3

Motorola, Inc
Part No. MRF21030D MRF21030R3 MRF21030SR3
OCR Text ...MHz, f2 = 2140.1 MHz) 3rd Order intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two...
Description RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

File Size 372.54K  /  8 Page

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    MRF21030LR3 MRF21030LSR3

Freescale Semiconductor, Inc
Part No. MRF21030LR3 MRF21030LSR3
OCR Text ...MHz, f2 = 2140.1 MHz) 3rd Order intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 403.08K  /  8 Page

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    MRF21120

Motorola, Inc
Part No. MRF21120
OCR Text ... = 2170.0 MHz, f2 = 2170.1 MHz) intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Common-Source...
Description MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 385.56K  /  8 Page

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    MRF426

Motorola, Inc
Part No. MRF426
OCR Text ...Gain = 22 dB Efficiency = 35% * intermodulation Distortion @ 25 W (PEP) -- IMD = - 30 dB (Max) * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Class A and AB Characterization * BLX 13 Equivalent MRF426 25 W (PEP), 3...
Description RF POWER TRANSISTOR NPN SILICON

File Size 112.51K  /  6 Page

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    MRF448

Motorola, Inc
Part No. MRF448
OCR Text ...Gain = 12 dB Efficiency = 45% * intermodulation Distortion @ 250 W (PEP) -- IMD = - 30 dB (Max) * 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR MRF448 250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211-11, STYLE...
Description RF POWER TRANSISTOR NPN SILICON

File Size 108.56K  /  6 Page

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For intermodulation Found Datasheets File :: 7596    Search Time::2.125ms    
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