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For infra Found Datasheets File :: 884    Search Time::1.875ms    
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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...ge is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 2 7 3 6 ...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...ge is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS ...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...ge is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE RATINGS IRF7809A...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...ge is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...ge is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 44 2.0 3.5 2....
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...ge is designed for vapor phase, infra red, or wave soldering techniques. T op V iew Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Note...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...ge is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    MC68328P MC68328UM MC68328 M68000PM

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MC68328P MC68328UM MC68328 M68000PM
OCR Text ... MASTER SPI SLAVE SPI UART WITH infra-RED SUPPORT PROCESSOR CONTROL AND PORTC Figure 1. MC68328 Block Diagram This document contains information on a product under development. Motorola reserves the right to change or discontinue t...
Description Integrated Portable System Processor-DragonBall

File Size 194.86K  /  6 Page

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    BD3813KS BD3815KS

ROHM[Rohm]
Part No. BD3813KS BD3815KS
OCR Text ... 0.1 OUT FR OUT FL 42 infra 47k INFLA 47k 43 44 SW1 DVD 6.1ch INSWA 47k INSRA 47k 45 46 INSLA 47k INC A 47k INSBA 47k INFRB 47k 47 48 49 50 A INFLB 47k 51 52 INSWB D/A 6.1ch 47k INSRB 47k 5...
Description 6-channel volume IC for 6.1-channel

File Size 92.48K  /  3 Page

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    IRF7389 IRF7389TR

IRF[International Rectifier]
Part No. IRF7389 IRF7389TR
OCR Text ...ge is designed for vapor phase, infra red, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C ...
Description Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 210.72K  /  10 Page

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