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  hfe. Datasheet PDF File

For hfe. Found Datasheets File :: 30552    Search Time::2.687ms    
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    MJE243

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Inchange Semiconductor Company Limited
Part No. MJE243
OCR Text ... = 100 V(Min) *DC Current Gain: hFE = 40(Min) @ IC= 0.2 A *Low Collector Saturation Voltage: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A *Complement to Type MJE253 APPLICATIONS *Designed for low power audio amplifier and low-current, high-speed switch...
Description isc Silicon NPN Power Transistor

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    2SB1207

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1207
OCR Text ...5C) Symbol ICBO VCBO VCEO VEBO hFE *1 Conditions VCB = -10V, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -0.4A, IB = -8mA IC = -0.4A, IB = -8mA VCB = -10V, IE = 50mA, ...
Description Silicon PNP epitaxial planer type(For low-voltage output amplification)

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    2SB1209

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1209
OCR Text ...(Ta=25C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = -100A, IE = 0 IC = -500A, IB = 0 IE = -100A, IC = 0 VCE = -5V, IC = -30mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VCB = -30V, IE = 20mA, f = 200MHz VCB = -30V,...
Description Silicon PNP triple diffusion planer type(For low-frequency amplification)

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    2SB561

HITACHI[Hitachi Semiconductor]
Part No. 2SB561
OCR Text ...(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* 1 Min -25 -20 -5 -- 85 -- -- -- -- Typ -- -- -- -- -- -0.2 -0.75 350 20 Max -- -- -- -1.0 240 -0.5 -1.0 -- -- Unit V V V A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -1...
Description Silicon PNP Epitaxial

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    2SB562

Hitachi Semiconductor
Part No. 2SB562
OCR Text ...(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* 1 Min -25 -20 -5 -- 85 -- -- -- -- Typ -- -- -- -- -- -0.2 -0.8 350 38 Max -- -- -- -1.0 240 -0.5 -1.0 -- -- Unit V V V A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10...
Description Silicon PNP Epitaxial

File Size 29.50K  /  6 Page

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    2SD1963

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SD1963
OCR Text ...bol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50iA IC=1mA IE=50iA VCB=40V VEB=5V VCE=2V, IC=0.5A 180 0.25 150 35 Testconditons Min 50 20 6 0.5 0.5 560 0.45 V MHz pF Typ Max Unit V V V iA iA VCE(sat) IC=1.5 A, IB=0.15A fT Cob VCE=6V, IE= -50mA, ...
Description Power Transistor

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    2SD1950

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SD1950
OCR Text hfe. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse) * Total power dissipation Jun...
Description NPN Silicon Epitaxia

File Size 46.97K  /  1 Page

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    2SD1899-Z

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SD1899-Z
OCR Text ...E(sat). +0.2 9.70 -0.2 High hfe. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ra...
Description NPN Silicon Epitaxial Transistor

File Size 39.58K  /  2 Page

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    2SB642

PANASONIC[Panasonic Semiconductor]
Part No. 2SB642
OCR Text ...h foward current transfer ratio hfe. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.00.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to ...
Description Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

File Size 49.24K  /  3 Page

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    2SD1898

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SD1898
OCR Text hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC IC (Pulse) * Collector power dissipation Junctio...
Description Power Transistor

File Size 47.02K  /  1 Page

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For hfe. Found Datasheets File :: 30552    Search Time::2.687ms    
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