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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT60PR21
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| Description |
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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Infineon Technologies A...
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| Part No. |
BGT60
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| Description |
Infineon rounds off the Backhaul Family with a packaged RF Solution for V-band Radio
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| File Size |
421.78K /
2 Page |
View
it Online |
Download Datasheet
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Toshiba, Corp.
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| Part No. |
GT60N321
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| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
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| File Size |
172.02K /
6 Page |
View
it Online |
Download Datasheet
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Bom2Buy.com

Price and Availability
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