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  GT30J121 Datasheet PDF File

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    GT30J121

TOSHIBA[Toshiba Semiconductor]
Part No. GT30J121
Description TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
File Size 293.15K  /  6 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. GT30J121
Description IGBT, 600 V, 30 A, TO-3P(N)
Tech specs 　 　

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    GT30J12106

Toshiba Semiconductor
Part No. GT30J12106
Description Silicon N Channel IGBT High Power Switching Applications
File Size 177.50K  /  6 Page

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