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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MSA-0670
OCR Text	...B Typical at 0.5 GHz * Hermetic gold-ceramic Microstrip Package high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in indus...
Description	Cascadable Silicon Bipolar MMIC Amplifier
File Size	45.46K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MSA-0685 MSA0685
OCR Text	...lignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package ...
Description	Cascadable Silicon Bipolar MMIC Amplifier
File Size	45.33K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MSA-0686 MSA-0686-BLK MSA-0686-TR1 MSA0686
OCR Text	...lignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 86 Plastic Package ...
Description	Cascadable Silicon Bipolar MMIC Amplifier
File Size	45.78K / 4 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	PZ2024B20U
OCR Text	... and withstanding a high VSWR * gold metallization realizes very stable characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input and output prematching en...
Description	NPN microwave power transistors
File Size	130.07K / 16 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] Infineon Technologies A...
Part No.	08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text	...n the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features * * Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typi...
Description	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
File Size	201.97K / 10 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	AM0608-200
OCR Text	..., this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG...
Description	Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:15-19 RoHS Compliant: No AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS, RF & MICROWAVE TRANSISTORS
File Size	62.49K / 3 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	AM0608-450 2719
OCR Text	..., this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Po...
Description	AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS From old datasheet system
File Size	81.56K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	...eriphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Chip Outline G G S D S Description The ATF-10100 is a high performance gallium arsenide Schottk...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	...eriphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

For gold Found Datasheets File :: 39089 Search Time::1.891ms
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