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For glass Found Datasheets File :: 31237    Search Time::1.828ms    
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    Vishay Semiconductors
Part No. LS4151-GS18
OCR Text ...n: 2 (0.079) min. > r3 (r0.118) glass 1.7 (0.067) glass the gap bet w een pl u g and glass can be either on cathode or anode side legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all ...
Description SWITCHING DIODE GENPURP QUADROMELF-E2 - Tape and Reel

File Size 93.19K  /  4 Page

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    UPA2670T1R UPA2670T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2670T1R UPA2670T1R-E2-AX
OCR Text ...ty cycle 1% ? 2. mounted on glass epoxy boar d of 25.4mm x 25.4mm x 0.8mmt r07ds0833ej0101 rev.1.01 apr 15, 2013 6 p inhuson2020 ( dual ) pa2670t1r r07ds0833ej0101 rev.1.01 page 2 of 6 apr 15, 2013 electrical chara...
Description DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m

File Size 256.75K  /  7 Page

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    UPA2631T1R UPA2631T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2631T1R UPA2631T1R-E2-AX
OCR Text ...ty cycle 1% ? 2. mounted on glass epoxy boar d of 25.4mm x 25.4mm x 0.8mmt r07ds0991ej0100 rev.1.00 dec 27, 2012 6 p inhuson2020 pa2631t1r r07ds0991ej0100 rev.1.00 page 2 of 6 dec 27, 2012 electrical characteristics...
Description P-CHANNEL MOSFET -20 V, -8.0 A, 32 m

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    UPA2600T1R UPA2600T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2600T1R UPA2600T1R-E2-AX
OCR Text ...ty cycle 1% ? 2. mounted on glass epoxy boar d of 25.4mm x 25.4mm x 0.8mmt r07ds0998ej0100 rev.1.00 jan 15, 2013 6 p inhuson2020 pa2600t1r r07ds0998ej0100 rev.1.00 page 2 of 6 jan 15, 2013 electrical characteristics...
Description N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

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    TOSHIBA
Part No. TPN7R506NH
OCR Text ...ty. note 3: device mounted on a glass-epoxy board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = 48 v, t ch = 25 (initial), l = 0.12 mh, i ar = 26 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1 ...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

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    TOSHIBA
Part No. TPC6130
OCR Text ... . note 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = -16 v, t ch = 25 (initial), l = 1 mh, r g = 25 ? , i ar = -2.8 a fig. fig. fig. fig. 5...
Description Power MOSFET (P-ch single)

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    TPN2R203NC

Toshiba Semiconductor
Part No. TPN2R203NC
OCR Text ...ty. note 3: device mounted on a glass-epoxy board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = 24 v, t ch = 25 (initial), l = 0.048 mh, i ar = 45 a fig. fig. fig. fig. 5.1 5.1 5.1 5....
Description MOSFETs Silicon N-channel MOS (U-MOS)

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    TOSHIBA
Part No. TPN2R203NC
OCR Text ...ty. note 3: device mounted on a glass-epoxy board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = 24 v, t ch = 25 (initial), l = 0.048 mh, i ar = 45 a fig. fig. fig. fig. 5.1 5.1 5.1 5....
Description Power MOSFET (N-ch single VDSS≤30V)

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Part No. 186PC05DT
OCR Text ...adhesive, silicon, borosilicate glass, and silicon-to- glass bond * p2 port absolute only: factory sealed vacuum reference, no connection p1 port dry gases only * liquid media containing some highly ionic solutions could potentially neutral...
Description DIFFERENTIAL, STRAIN GUAGE PRESSURE SENSOR, 0-5Psi, 3.50-6V, RECTANGULAR, THROUGH HOLE MOUNT

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    TPCP8510

Toshiba Semiconductor
Part No. TPCP8510
OCR Text ... note 2: mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) note 3: using continuously under heavy loads (e.g. t he application of high temperature/current/voltage and the significant change in temperature, etc.) may c...
Description Transistor Silicon NPN Epitaxial Type

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