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  gaaias-ir-lumineszenzdiode Datasheet PDF File

For gaaias-ir-lumineszenzdiode Found Datasheets File :: 9    Search Time::1.062ms    
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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q62703-Q2852
OCR Text gaaias-ir-lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 5.0 4.2 Cathode 3.85 3.35 o5.1 o4.8 5.9 5.5 1.8 1.2 29 27 1.0 0.5 Chip position 0.6 0....
Description Super SIDELED High-Current LED 超SIDELED高电流LED
gaaias-ir-lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system

File Size 44.57K  /  4 Page

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    SFH4289

Electronic Theatre Controls, Inc.
ETC
OSRAM GmbH
Part No. SFH4289
OCR Text ... * * * * * * * TOPLED mit Linse GaAIAs-LED mit sehr hohem Wirkungsgrad Gute Linearitat (Ie = f [IF]) bei hohen Stromen Gleichstrom- (mit Mod...IR-Freiraumubertragung Typ Type Bestellnummer Ordering Code Applications * * * * * * * Miniature ...
Description GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode,盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头

File Size 60.77K  /  6 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. SFH426 SFH421 Q62703-P0331 Q62702-P1055
OCR Text ...fied. Wesentliche Merkmale q GaAIAs-LED mit sehr hohem Wirkungsgrad q Gute Linearitat (Ie = f [IF]) bei hohen Stromen q Gleichstrom- (mit...IR-Reflow-Lotung geeignet. Bei Schwallotung wenden Sie sich bitte an uns. Features q Very highly ...
Description GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode,在SMT Geh锓包GaAlA红外发射
GaAlAs-IR-Lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package

File Size 52.40K  /  5 Page

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    Q62703-Q1090 SFH483E7800 SFH483

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62703-Q1090 SFH483E7800 SFH483
OCR Text ...fied. Wesentliche Merkmale q gaaias-ir-lumineszenzdiode mit hohem Wirkungsgrad q Die Anode ist galvanisch mit dem Gehauseboden verbunden q Hohe Impulsbelastbarkeit q Hohe Zuverlassigkeit q Anwendungsklasse nach DIN 40040 GQG q Gehausegle...
Description GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射
From old datasheet system

File Size 33.58K  /  5 Page

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    Q62703-Q1094 SFH486

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q62703-Q1094 SFH486
OCR Text gaaias-ir-lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 o5.1 o4.8 5.9 5.5 Anode 1.8 1.2 29.5 27.5 5.7 5.1 Chip position 0.6 0.4 ...
Description From old datasheet system
gaaias-ir-lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm

File Size 37.35K  /  4 Page

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    Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
Part No. Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487
OCR Text gaaias-ir-lumineszenzdiode (880nm) GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat 0.7 0.4 0.6 0.4 5.2 4.5 2.54 mm spacing 0.8 0.4 4.1 3.9 4.0 3.6 Approx. weight 0.3 g Mae in mm, wenn nicht anders angeg...
Description From old datasheet system
gaaias-ir-lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
gaaias-ir-lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm

File Size 40.88K  /  5 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. SFH487P Q62703-Q517
OCR Text gaaias-ir-lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 487 P Area not flat 0.7 0.8 0.4 0.4 0.6 0.4 3.1 2.5 2.0 1.7 4.0 3.6 2.54 mm spacing o3.1 o2.9 1.8 1.2 29 27 4.5 4.0 Cathode 3.5 Chip positio...
Description gaaias-ir-lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system

File Size 37.63K  /  5 Page

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    SFH42102 SFH421 SFH426

OSRAM GmbH
Part No. SFH42102 SFH421 SFH426
OCR Text ...H 426 Wesentliche Merkmale * GaAIAs-LED mit sehr hohem Wirkungsgrad * Gute Linearitat (Ie = f [IF]) bei hohen Stromen * Gleichstrom- (mit...IR-Reflow-Lotung geeignet. Anwendungen * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb,...
Description GaAlAs Infrared Emitter in SMT Package

File Size 73.48K  /  7 Page

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    Q62703Q0517

OSRAM GmbH
Part No. Q62703Q0517
OCR Text gaaias-ir-lumineszenzdiode (880 nm) gaaias infrared emitter (880 nm) lead (pb) free produc t - rohs compliant 2007-04-02 1 wesentliche merkmale ? gaalas-led mit sehr hohem wirkungsgrad ? hohe zuverl?ssigkeit ? hohe impulsbelastbarkeit...
Description gaaias-ir-lumineszenzdiode (880 nm)

File Size 130.89K  /  8 Page

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For gaaias-ir-lumineszenzdiode Found Datasheets File :: 9    Search Time::1.062ms    
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