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				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	... VDSS = 150V RDS(on) = 0.042 g ID = 43A S Description Fifth generation HEXFETs from International Rectifier utilize advanced proc...p ak T O -26 2 Absolute Maximum Ratings parameter ID @ TC = 25C ID @ TC = 100C IDM pD @TA = ...
Description	power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...nche Rated D VDSS = 150V g S RDS(on) = 0.042 ID = 43A Description Fifth generation HEXFETs from International Rectifier utiliz...p-n junction diode. TJ = 25C, IS = 22A, VgS = 0V TJ = 25C, IF = 22A di/dt = 100A/s D S No...
Description	power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	...symbol 41 --- --- showing the A g integral reverse --- --- 164 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VgS = 0V --- 200 300 ns TJ = 25C, IF = 25A --- 1.6 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on i...
Description	power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703pBF
OCR Text	...ons D MOSFET symbol showing the g integral reverse S p-n junction diode. TJ = 25C, IS = 76A, VgS = 0V TJ = 25C, IF = 76A, VDS = 16V di/dt = 100A/s 2 www.irf.com IRF3703 10000 I D , Drain-to-Source Current (A) 1000 100 ...
Description	30V Single N-Channel HEXFET power MOSFET in a TO-220AB package power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	...unted on 1" square pCB (FR-4 or g-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Not...p-n junction diode. S TJ = 25C, IS = 35.5A, VgS = 0V TJ = 125C, IS = 35.5A, VgS = 0V TJ = 25C, IF ...
Description	20V Single N-Channel HEXFET power MOSFET in a D2-pak package 20V Single N-Channel HEXFET power MOSFET in a TO-262 package 20V Single N-Channel HEXFET power MOSFET in a TO-220AB package power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, pICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	...ons D MOSFET symbol showing the g integral reverse S p-n junction diode. TJ = 25C, IS = 36A, VgS = 0V TJ = 125C, IS = 36A, VgS = 0V TJ = 25C, IF = 36A, VR=20V di/dt = 100A/s TJ = 125C, IF = 36A, VR=20V di/dt = 100A/s 2 www.irf.com...
Description	power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707pBF IRF3707STRL IRF3707STRR
OCR Text	...unted on 1" square pCB (FR-4 or g-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Not...p-n junction diode. TJ = 25C, IS = 31A, VgS = 0V TJ = 125C, IS = 31A, VgS = 0V TJ = 25C, I F = 31A...
Description	30V Single N-Channel HEXFET power MOSFET in a D2-pak package 30V Single N-Channel HEXFET power MOSFET in a TO-262 package 30V Single N-Channel HEXFET power MOSFET in a TO-220AB package power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...unted on 1" square pCB (FR-4 or g-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Not...p-n junction diode. TJ = 25C, IS = 31A, VgS = 0V TJ = 125C, IS = 31A, VgS = 0V TJ = 25C, I F = 31A...
Description	power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	...ons D MOSFET symbol showing the g integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VgS = 0V TJ = 125C, IS = 30A, VgS = 0V TJ = 25C, IF = 30A, VR=15V di/dt = 100A/s TJ = 125C, IF = 30A, VR=15V di/dt = 100A/s 2 www.irf.com...
Description	power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	... VDSS = 100V RDS(on) = 0.025 g Description Fifth generation HEXFETs from International Rectifier utilize advanced processing techniqu...p ak T O -26 2 Absolute Maximum Ratings parameter ID @ TC = 25C ID @ TC = 100C IDM pD @TA = ...
Description	power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

For g p Found Datasheets File :: 173473 Search Time::2.047ms
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