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Part No. |
MT47H64M4BG-37E
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OCR Text |
ddr2_1.fm - rev. d 7/04 en 1 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr2 sdram ddr2 sdram mt47h64m4?16 meg x...400) -5e 3.75ns @ cl = 4 (ddr2-533) -37e architecture 64 meg x 4 32 meg x 8 16 meg x 16 configurati... |
Description |
64M X 4 DDR DRAM, 0.5 ns, PBGA84
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File Size |
7,755.37K /
104 Page |
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PROMOS TECHNOLOGIES INC
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Part No. |
V59C1512804QBF37
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OCR Text |
ddr2 sdram 4 banks x 32mbit x 4 (404) 4 banks x 16mbit x 8 (804) 4 banks x 8mbit x 16 (164) preliminary v59c1512(404/804/164)qb rev.1.3 november 2006 5 37 3 25a 25 ddr2-400 ddr2-533 ddr2-667 ddr2-800 ddr2-800 clock cycle time (t ck3 ) 5ns ... |
Description |
64M X 8 DDR DRAM, 0.5 ns, PBGA60
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File Size |
1,189.75K /
76 Page |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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OCR Text |
DDR2 SDRAM
DDR2 Unbuffered SODIMM
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
INFORMATION IN THIS DOCUMENT IS PROVIDE...400 533 4-4-4 CC(ddr2-400) 400 400 3-3-3 Unit Mbps Mbps CK
* JEDEC standard 1.8V 0.1V Power Supp... |
Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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File Size |
325.20K /
19 Page |
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Price and Availability
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