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For awg Found Datasheets File :: 177872    Search Time::2.797ms    
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    1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G

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ONSEMI[ON Semiconductor]
Part No. 1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMCXXXAT3 15SMC68AT3 1.5SMCXXXAT3G 1.5SMC11AT3 1.5SMC13AT3 1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3 1.5SMC22AT3 1.5SMC27AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC6.8AT3 1.5SMC62AT3G 1.5SMC82AT3 1.5SMC9.1AT3 1.5SMC91AT3 1.5SMC62AT3 1.5SMC16A 1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC43A 1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC68A 1.5SMC82A 1.5SMC15A 1.5SMC62A 1.5SMC75A 1.5SMC75AT3
OCR Text ...es. **The "T3" suffix refers to a 13 inch reel. Individual devices are listed on page 3 of this data sheet. (c) Semiconductor Components...W W mW/C C/W W mW/C C/W A C Maximum ratings are those values beyond which device damage can occur...
Description Zener Diode
Transistor Suppressor
High Power
1500 Watt Peak Power Zener Transient Voltage Suppressors
ELR 2/1-230Z
1500 Watt Peak Power Zener Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

File Size 73.47K  /  8 Page

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    1N6637US 1N5969US 1N5968US 1N6632US 1N6633US 1N6634US 1N6635US 1N6636US

CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
Part No. 1N6637US 1N5969US 1N5968US 1N6632US 1N6633US 1N6634US 1N6635US 1N6636US
OCR Text ....0 1.0 4.28 4.74 FIGURE 1 A 300 250 175 25 20 5 5000 1000 DESIGN DATA CASE: D-5B, Hermetically sealed glass case, PER MIL-PRF 195...W maximum at L = 0 THERMAL IMPEDANCE: (ZOJX): 3 C/W maximum POLARITY: Diode to be operated with the ...
Description 5 WATT ZENER DIODES
Zener Diodes(齐纳二极
surface mount silicon Zener diodes

File Size 58.47K  /  2 Page

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    2SA1083 2SA1084 2SA1085

HITACHI[Hitachi Semiconductor]
Part No. 2SA1083 2SA1084 2SA1085
OCR Text ... V V Unit Test conditions V V V A A IC = -10 A, IE = 0 IC = -1 mA, RBE = IE = -10 A, IC = 0 VCB = -50 V, I E = 0 VEB = -2 V, IC = 0 VCE = -...W -20 200 -20 A -10 IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -4 -8 -12...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 40.84K  /  8 Page

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ... 0.9 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) Item Symbol Min -60 -- -- 2000 -- -- -- -- Typ -- -- -- -- -- -- 0.3 0.9 Max -- -1.0 -1.0 -- -1.5 -2.0 -- -- V V s s I C = -250 mA I B1 = -IB2 = -0.5 mA Uni...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...8 150 -55 to +150 Unit V V V A A W W C C 2SA1194(K) Electrical Characteristics (Ta = 25C) Item Symbol Min -60 -- -- 1000 -- -- -- -- Typ -- -- -- -- -- -- 0.7 0.8 Max -- -1.0 -1.0 -- -2.0 -2.0 -- -- V V s s I C = -500 mA I B1 = -IB2...
Description Silicon PNP Epitaxial

File Size 34.49K  /  5 Page

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    2SA2027

Isahaya Electronics Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 2SA2027
OCR Text A*A*`IE*YOEv*A*`eAeU**B *@ZbgI*OE^*A*-"xZA`*--pAEA***L-Zg--p1/2 3/4U**B SO*@OE*@*} 'PE :mm 4.6 MAX 1.6 1.5 "A*@'* *E*OESOOEI1/2*AZb...W hFEACe "j"O No. *`OEZ "dC"I"A* (Ta=25 *Z ) L*@* V(BR)CBO V(BR)EBO V(BR)CEO I I CBO EBO *...
Description SILICON EPITAXIAL TRANSISTOR

File Size 54.89K  /  4 Page

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...in: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ....W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse 645 mm2...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...in: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ...W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse area: 6...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...in: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ...W C C SC-62 2-5K1A JEITA TOSHIBA Weight: 0.05 g (typ.) Note: Mounted on FR4 board (glas...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...ain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ...W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse 645 mm2...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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