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TC55329J 001591 HFA08 TC55V TF656N VRE304KD 5C9V1 IN5393G
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    Motorola
Part No. MC14578
OCR Text ...imes to ensure a solid level is attained. But, in a low battery detector, this probably is not necessary. To eliminate comparator chatter, hysteresis can be added as shown in Figure 2. The circuit of Figure 2 requires slightly more operatin...
Description CMOS Mlcro-Power Comparator plus Voltage Follower

File Size 118.11K  /  8 Page

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    Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10
OCR Text ...DS /dt in excess of 10 V/ns was attained with dI S /dt of 400 A/s. 4 Motorola TMOS Power MOSFET Transistor Device Data MMFT1N10E 15 V VGS 0 IFM 90% IS 10% ton IRM tfrr VDS(pk) VR VDS VdsL MAX. CSOA STRESS AREA 0.25 IRM dlS/dt trr ...
Description MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system

File Size 236.13K  /  10 Page

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    TDA4605

Siemens Semiconductor Group
Part No. TDA4605
OCR Text ...ation over a wide load range is attained, this IC is applicable tor consumer and industrial power supplies. The serial circuit of power transistor and primary winding of the flyback transformer is connected to the input voltage. During the ...
Description Control IC for Switched-Mode Power Supplies using MOS-Transistors

File Size 435.00K  /  21 Page

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    Atmel
Part No. M67202A M67201A M67201
OCR Text ...01A/202A. Any word width can be attained by adding additional M 67201A/202A. Figure 3. Block Diagram of 512 / 1024 x 18 FIFO Memory Used in Width Expansion Mode. HF 9 DATAIN (1) (R) READ WRITE FULL FLAG RESET (RS) 9 9 XI XI 18 (Q)DATAOU...
Description 512 x 9 & 1 k x 9 CMOS Parallel FIFO
From old datasheet system

File Size 177.76K  /  17 Page

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    OKI[OKI electronic componets]
OKI electronic components
Part No. MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C50 MSM5718C50-60GS-K MD5764802-60MC
OCR Text ...ogies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations perm...
Description 64Mb(8Mx8) concurrent RDRAM
From old datasheet system
(MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
18Mb(2Mx9) concurrent RDRAM

File Size 545.07K  /  46 Page

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    FM27C040 FM27C040X120 FM27C040X150 FM27C040X90

Fairchild Semiconductor
Part No. FM27C040 FM27C040X120 FM27C040X150 FM27C040X90
OCR Text ...0.10V. Note 5: TRI-STATE may be attained using OE or CE . Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 F ceramic capacitor be used on every device between VCC...
Description 4,194,304-Bit (512K x 8)High Performance CMOS EPROM

File Size 94.54K  /  10 Page

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    FM27C512 FM27C512V FM27C512_01 FM27C512Q FM27C512QE FM27C512VE FM27C512QE120 FM27C51201 FM27C512Q120 FM27C512Q90 FM27C51

ETC[ETC]
Fairchild Semiconductor
Part No. FM27C512 FM27C512V FM27C512_01 FM27C512Q FM27C512QE FM27C512VE FM27C512QE120 FM27C51201 FM27C512Q120 FM27C512Q90 FM27C512V120 FM27C512V90 FM27C512QE90 FM27C512VE90 FM27C512Q-90 FM27C512QE-120 FM27C512X90 FM27C512X120 FM27C512X150
OCR Text ...0.10V. Note 5: TRI-STATE may be attained using OE or CE . Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 F ceramic capacitor be used on every device between VCC...
Description    524,288-Bit (64K x 8) High Performance CMOS EPROM
524288-Bit (64Kx 8) High Performance CMOS EPROM(95.70 k)
524,288-Bit (64K x 8)High Performance CMOS EPROM

File Size 93.36K  /  10 Page

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    GS832018 GS832018T-133 GS832018T-133I GS832018T-150 GS832018T-150I GS832018T-166 GS832018T-166I GS832018T-200 GS832018T-

ETC
GSI[GSI Technology]
Part No. GS832018 GS832018T-133 GS832018T-133I GS832018T-150 GS832018T-150I GS832018T-166 GS832018T-166I GS832018T-200 GS832018T-200I GS832018T-225 GS832018T-225I GS832018T-250 GS832018T-250I GS832036T-250I GS832018GT-133 GS832018GT-133I GS832018GT-150 GS832018GT-150I GS832018GT-166 GS832018GT-166I GS832018GT-200 GS832018GT-200I GS832018GT-225 GS832018GT-225I GS832018GT-250 GS832018GT-250I GS832032 GS832032GT-133 GS832032GT-133I GS832032GT-150 GS832032GT-150I GS832032GT-166 GS832032GT-166I GS832032GT-200 GS832032GT-200I GS832032GT-225 GS832032GT-225I GS832032GT-250 GS832032GT-250I GS832032T-133 GS832032T-133I GS832032T-150 GS832032T-150I GS832032T-166 GS832032T-166I GS832032T-200 GS832032T-200I GS832032T-225 GS832032T-225I GS832032T-250 GS832032T-250I GS832036 GS832036GT-133 GS832036GT-133I GS832036GT-150 GS832036GT-150I GS832036GT-166 GS832036GT-166I GS832036GT-200 GS832036GT-200I GS832036GT-225 GS832036GT-225I GS832036GT-250 GS832036GT-250I GS832036T-133 GS832036T-133I GS832036T-150I GS832036T-166 GS832036T-166I GS832036T-200 GS832036T-200I GS832036T-225 GS832036T-225I GS832036T-250
OCR Text ... Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS832018/32/36T operates on a 2.5 V or 3.3 V p...
Description 36Mb Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

File Size 447.18K  /  25 Page

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    Atmel
Part No. M672061E M672061
OCR Text ...M672061E. Any word width can be attained by adding additional M672061E. Block Diagram of 16384 x 18 FIFO Memory Used in Width Expansion Mode. PHF 9 PHF 9 18 DATAIN (I) (R) READ WRITE FULL FLAG RESET (RS) 9 9 XI XI 18 (Q) DATAOUT N...
Description 16 K x 9 CMOS With Programmable Half Full Flag Parallel FIFO Rad Tolerant
From old datasheet system

File Size 112.59K  /  17 Page

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