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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ... next page. Marking : 2SA2011 : AR 2SC5564 : FA Any and all SANYO products described or contained herein do not have specifications that ...m) 140 160 3.0 2.5 2.0 1.5 1.0 0.5 0 M ou nte 1.0 do na ce ram ic ...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.71K  /  5 Page

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    AD8610 AD8610AR AD8610ARM AD8610BR

Analog Devices, Inc.
AD[Analog Devices]
Part No. AD8610 AD8610AR AD8610ARM AD8610BR
OCR Text ...nal Amplifiers Pr el i m i n ar y Technical Data AD8610 The AD8610 is specified over the extended industrial (-40 to +125C) temperature range. The AD8610 is available in the 8-lead SOIC and the tiny MSOP8 surface mount packages. MS...
Description Precision Very Low Noise Low Input Bias Current Wide Bandwidth JFET Operational Amplifiers OP-AMP, 200 uV OFFSET-MAX, 25 MHz BAND WIDTH, PDSO8
Precision Very Low Noise Low Input Bias Current Wide Bandwidth JFET Operational Amplifiers OP-AMP, 850 uV OFFSET-MAX, 25 MHz BAND WIDTH, PDSO8

File Size 36.37K  /  4 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ... 2.0 S AF E O P ER AT IN G AR EA 10 1.0 0.0 0 5 10 15 20 25 30 1 1 10 100 A 1000 I C , Collector-to-emitter Current (A) VC E , C ollector-to -E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collect...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...JC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1010ZS/L D...M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING &...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...JC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1302S/IRF1302L Peak Diode Recovery dv/dt Test Circuit D.U.T* + + Circuit Layout Considerations * L...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...JC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1302 Peak ...M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLE...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...JC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1405S/L P...M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...JC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1405 Peak...M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...JC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRF1407 Peak ...M IN 1 2 3 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOU RCE 4 - D R A IN 1 4.09 ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...JC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1607 Peak...M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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