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    Amphenol, Corp.
SYNC-POWER[SYNC POWER Crop.]
Part No. SPP4953S8TG SPP4953 SPP4953S8RG
OCR Text ...0m@VGS=- 6V -30V/-3.7A,RDS(ON)= 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP - 8P package design APPLICATIONS Power Management in Note book Portable ...
Description P-Channel Enhancement Mode MOSFET P沟道增强型MOS

File Size 213.45K  /  8 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM2832CY TSM2832
OCR Text ... (on), Vgs @ 2.5V, Ids @ 3.1A = 90m Pin assignment: 1. Gate 2. Drain 3. Source Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operat...
Description 20V N-Channel Enhancement Mode MOSFET

File Size 166.77K  /  5 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM3442CX6 TSM3442
OCR Text ... (on), Vgs @ 2.5V, Ids @ 3.1A = 90m Features Advanced trench process technology High density cell design for ultra low on-resistance N-Channel 2.5V (G-S) MOSFET Excellent thermal and electrical capabilities Compact and low profile SOT-2...
Description 20V N-Channel Enhancement Mode MOSFET

File Size 164.33K  /  3 Page

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    Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM4405P
OCR Text ...), Vgs @ - 1.8V, Ids @ - 4.0A = 90m S S D G Patent Pending Description Bump Side View TSM4405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimiz...
Description Single P-Channel 1.8V Specified MicroSURF MOSFET

File Size 179.75K  /  6 Page

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    UTC[Unisonic Technologies]
Part No. US104S
OCR Text ...A) Tj=max: Vto=0.85V 10.0 Rd=90m Tj=Tjmax. 1.0 Tj=25 0.1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated va...
Description SCRs

File Size 189.70K  /  4 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. VNQ690SPTR-E VNQ690SP-E
OCR Text 90m (*) Figure 1. Package Iout 10A VCC 36V (*) Per each channel s OUTPUT CURRENT PER CHANNEL: 10A s CMOS COMPATIBLE INPUTS s OPEN LOAD DETECTION (OFF STATE) s UNDERVOLTAGE & OVERVOLTAGE n SHUT- DOWN s OVERVOLTAGE CLAMP s THE...
Description QUAD CHANNEL HIGH SIDE DRIVER

File Size 185.32K  /  20 Page

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    VITESSE[Vitesse Semiconductor Corporation]
Part No. VSC7958X VSC7958 VSC7958CC
OCR Text ... 1233m x 1705m 305m 100m x 100m 90m x 90m This device requires external components when used in die form. Please contact your Vitesse sales representative for information. Page 6 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Pl...
Description 2.5Gb/s High Speed Limiting Post Amplifier for OC-48/SDH-16 Applications

File Size 66.31K  /  8 Page

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    WEITRON[Weitron Technology]
Part No. WT2310
OCR Text ... Design For Low RDS(ON) RDS(ON)<90m@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren...
Description N-Channel Enhancement Mode Power MOSFET

File Size 617.40K  /  6 Page

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    WEITRON[Weitron Technology]
Part No. WTD9575
OCR Text ...esign For Low RDS(ON) R DS(ON) <90m @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package Features: SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maxim...
Description Surface Mount P-Channel Enhancement Mode POWER MOSFET

File Size 398.20K  /  6 Page

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    WEITRON[Weitron Technology]
Part No. WTK9435
OCR Text ...S(ON)<55m @VGS = -10V * RDS(ON)<90m @VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching 1 Description: The WTK9435 provide the designer with the best combination of fast switching, ruggedized device design,...
Description Surface Mount P-Channel Enhancement Mode MOSFET

File Size 1,390.83K  /  6 Page

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