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8ns Datasheet PDF File

For 8ns Found Datasheets File :: 2194 Search Time::2.562ms
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				Micron Technology
Part No.	MT48LC32M16A2 MT48LC128M4A2
OCR Text	...s 1.5ns 1.5ns 1.5ns HOLD TIME 0.8ns 0.8ns 0.8ns 0.8ns MT48LC32M16A2TG-75 512Mb SDRAM PART NUMBERS PART NUMBER MT48LC128M4A2TG MT48LC64M8A2TG MT48LC32M16A2TG ARCHITECTURE 128 Meg x 4 64 Meg x 8 32 Meg x 16 *CL = CAS (READ) latency ...
Description	(MT48LCxxMxxA2) SYNCHRONOUS DRAM
File Size	2,287.21K / 55 Page	View it Online	Download Datasheet

				TM Technology, Inc. Taiwan Memory Technology
Part No.	T35L6432A T35L6432A-5T T35L6432A-5Q
OCR Text	8ns F E ast clock speed: 125,100, 83, 66, and 50 MHz F E rovide high performance 3-1-1-1 access rate P E ast OE access times: 4.5, 5 and 6ns F E ingle 3.3V +10%/-5% power supply S E ommon data inputs and data outputs C E YTE WRITE ENABLE an...
Description	64K x 32 SRAM 0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter
File Size	1,346.97K / 15 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT48LC32M8A2
OCR Text	...s 1.5ns 1.5ns 1.5ns HOLD TIME 0.8ns 0.8ns 0.8ns 0.8ns None IT3 Refer to Micron Technical Note TN-48-05. Off-center parting line. Consult Micron for availability. Not available in x16 configuration. Actual FBGA part marking shown on pa...
Description	(MT48Lxxxx) SYNCHRONOUS DRAM
File Size	1,505.80K / 62 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	M5M4V64S20ATP-12 M5M4V64S20ATP-8
OCR Text	...00MHz 83MHz CLK Access Time 6ns 8ns 8ns CLK CKE /CS /RAS /CAS /WE DQ0-3 DQM A0-11 BA0,1 Vdd VddQ Vss VssQ : Master Clock : Clock Enable : Chip Select : Row Address Strobe : Column Address Strobe : Write Enable : Data I/O : Output Disa...
Description	64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
File Size	1,192.01K / 48 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D K6R4004C1D-JC K6R4004V1D K6R4004V1D-JKCI K6R4008C1D K6R4008C1D-JC K6R4008V1D-JC K6R4016V1D K6R4008V1D
OCR Text	...b and Isb1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1.2mA Nov.23. 2001 Preliminary Draft Data Aug. 20. 2...
Description	1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运 861 SOLID STATE RELAYS RoHS Compliant: Yes
File Size	216.37K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6R1004C1D-KC10 K6R1004C1D-KI10 K6R1004V1D K6R1004V1D-JC08 K6R1004V1D-JC08_10 K6R1004V1D-JC10 K6R1004V1D-JI08 K6R1004V1D-JI08_10 K6R1004V1D-JI10 K6R1004V1D-KC08 K6R1004V1D-KC08_10 K6R1004V1D-KI08 K6R1004V1D-KI08_10 K6R1004V1D-KI10 K6R1008C1D-JC10 K6R1008C1D-JI10 K6R1008C1D-KC10 K6R1008C1D-KI10 K6R1008C1D-TC10 K6R1008C1D-UC10 K6R1008C1D-UI10 K6R1008V1D-JC08 K6R1008V1D-JC08_10 K6R1008V1D-JC10 K6R1008V1D-JI08 K6R1008V1D-JI08_10 K6R1008V1D-JI10 K6R1008V1D-KC08 K6R1008V1D-KC08_10 K6R1008V1D-KC10 K6R1008V1D-KI08 K6R1008V1D-KI08_10 K6R1008V1D-KI10 K6R1008V1D-TC08 K6R1008V1D-TC08_10 K6R1008V1D-TC10 K6R1008V1D-TI08 K6R1008V1D-TI08_10 K6R1008V1D-TI10 K6R1008V1D-UC08 K6R1008V1D-UC08_10 K6R1008V1D-UC10 K6R1008V1D-UI08 K6R1008V1D-UI08_10 K6R1008V1D-UI10 K6R1016C1D-EC10 K6R1016C1D-EI10 K6R1016C1D-JC10 K6R1016C1D-JI10 K6R1016C1D-KC10 K6R1016C1D-KI10 K6R1016C1D-TC10 K6R1016C1D-TI10 K6R1016C1D-UC10 K6R1016C1D-UI10 K6R1016V1D-EC08 K6R1016V1D-EC08_10 K6R1016V1D-EC10 K6R1016V1D-EI08 K6R1016V1D-EI08_10 K6R1016V1D-EI10 K6R1016V1D-JC08 K6R1016V1D-JC08_10 K6R1016V1D-JC10 K6R1016V1D-JI08 K6R1016V1D-JI08_10 K6R1016V1D-JI10 K6R1016V1D-KC08 K6R1016V1D-KC08_10 K6
OCR Text	... Industrial mode. Item Previous 8ns 100mA ICC(Industrial) 10ns 85mA 1. Delete UB,LB releated timing diagram. 1. Add the Lead Free Package type. Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Current 90mA 75mA ...
Description	256K X 4 STANDARD SRAM, 10 ns, PDSO32 256K X 4 STANDARD SRAM, 8 ns, PDSO32 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作 TV 23C 21#20 2#16 SKT PLUG REC 64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges TV 55C 55#22D SKT PLUG RECP
File Size	189.78K / 9 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	ISL43L420IRZ-T ISL43L420 ISL43L420IR ISL43L420IR-T ISL43L420IRZ
OCR Text	...nd fast switching speeds (tON = 8ns, tOFF = 5ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins ...
Description	Ultra Low ON-Resistance, 1.1V to 4.5V Single Supply, Quad SPDT (Dual DPDT) Analog Switch QUAD 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PQCC16 Ultra Low ON-Resistance, 1.1V to 4.5V Single Supply, Quad SPDT (Dual DPDT) Analog Switch(超低导通电 1.1V4.5V单电四路单刀双掷（双路双刀双掷）模拟开
File Size	352.42K / 13 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R1016C1D-JTCI10/12 K6R1008C1D-JTCI10/12 K6R1008V1D-JTCI08/10 K6R1004C1D-JCI10/12 K6R1004V1D-JCI08/10 K6R1016V1D-JECI08/10 K6R1008V1D-JTCI08 K6R1008C1D-JTCI12 K6R1008V1D-JTCI10 K6R1008C1D-JTCI10 K6R1004C1D-JCI12 K6R1004C1D-JCI10 K6R1004V1D-JCI10 K6R1004V1D-JCI08
OCR Text	... Industrial mode. Item Previous 8ns 100mA ICC(Industrial) 10ns 85mA Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Current 90mA 75mA Remark Preliminary Preliminary Preliminary Final The attached data sheets...
Description	64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的） 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
File Size	176.15K / 9 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	ISL43L111IHZ-T ISL43L110 ISL43L110IHZ-T ISL43L111IH-T ISL43L110IH-T ISL43L111
OCR Text	...nd fast switching speeds (tON = 8ns, tOFF = 5ns). The digital logic input is 1.8V CMOS compatible when using a single +3V supply. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins m...
Description	Ultra Low ON-Resistance, 1.1V to 4.5V Single Supply, SPST Analog Switches 超低电阻.1V.5V的单电源，SPST模拟开 Ultra Low ON-Resistance, 1.1V to 4.5V Single Supply, SPST Analog Switches(超低导通电阻， 1.1V4.5V单电单刀单掷模拟开
File Size	290.59K / 11 Page	View it Online	Download Datasheet

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